APT33GF120LRD MICROSEMI, APT33GF120LRD Datasheet

APT33GF120LRD

Manufacturer Part Number
APT33GF120LRD
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of APT33GF120LRD

Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT33GF120LRD
Manufacturer:
APT
Quantity:
15 500
The Fast IGBT
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
V
V
Symbol
Symbol
T
BV
CE
V
GE
V
J
I
I
I
I
V
,T
I
I
CM1
CM2
P
CES
GES
CGR
T
CES
C1
C2
GE
(ON)
CES
(TH)
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
is a new generation of high voltage power IGBTs. Using Non-
Fast IGBT & FRED
1
1
(V
GE
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
@ T
= 20K )
= V
= V
= V
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
GE
GE
C
C
C
C
GE
GE
CES
CES
= 25°C
= 90°C
= 15V, I
= 15V, I
= 25°C
= 90°C
, I
= ±20V, V
, V
, V
C
GE
GE
GE
= 700µA, T
C
C
= 0V, I
= 0V, T
= 0V, T
= 25A, T
= 25A, T
CE
= 0V)
C
j
j
j
= 25°C)
= 125°C)
= 0.5mA)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
APT33GF120B2RD
APT33GF120LRD
C
= 25°C unless otherwise specified.
APT33GF120B2RD
APT33GF120B2RD/LRD
1200
G
MIN
4.5
G
C
E
-55 to 150
1200V
APT33GF120B2RD/LRD
T-Max
(B2RD)
1200
1200
104
300
300
TYP
±20
5.5
2.7
3.3
52
33
66
C
E
G
C
±100
MAX
E
6.5
3.2
3.9
0.5
5.0
APT33GF120LRD
TO-264
(LRD)
52A
Amps
Watts
UNIT
UNIT
Volts
Volts
mA
°C
nA

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APT33GF120LRD Summary of contents

Page 1

... T-Max (B2RD 25°C unless otherwise specified. C APT33GF120B2RD/LRD 1200 1200 ± 104 66 300 -55 to 150 300 MIN TYP MAX 1200 4.5 5.5 6.5 2.7 3.2 3.3 3.9 0.5 2 5.0 ±100 52A TO-264 (LRD) APT33GF120LRD UNIT Volts Amps Watts °C UNIT Volts mA nA ...

Page 2

DYNAMIC CHARACTERISTICS (IGBT) Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller") Charge gc t (on) Turn-on Delay Time d t ...

Page 3

V =17, 15 & 13V GE 11V 40 10V COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 1, Typical Output Characteristics (T 80 250µSec. Pulse Test V = 15V GE T ...

Page 4

1.5 1.0 -50 - JUNCTION TEMPERATURE (°C) J Figure 8, Typical V (SAT) Voltage vs Junction Temperature CE 1.2 1.1 1 0.9 0.8 0.7 ...

Page 5

A 10% B ( (off) V (on 90% 10% V (on (off) GE (on ...

Page 6

DYNAMIC CHARACTERISTICS (FRED) Symbol Characteristic/ Test Conditions t Reverse Recovery Time, I rr1 t Reverse Recovery Time rr2 30A, di /dt = -240A/µS, V rr3 Forward Recovery Time fr1 30A, di ...

Page 7

T = 150° 25° 100° -55° ANODE-TO-CATHODE VOLTAGE (VOLTS) F Figure 19, Forward Voltage Drop vs Forward Current ...

Page 8

T-MAX TM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. ...

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