BT168 Philips Semiconductors, BT168 Datasheet
BT168
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BT168 Summary of contents
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... ˚C prior to surge mA /dt = 100 mA over any 20 ms period - - Product specification BT168 series MAX. MAX. MAX. MAX. UNIT 200 400 500 600 0.5 0.5 0.5 0.5 0.8 0.8 0.8 0 SYMBOL MAX. ...
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... TM D DRM(max / 125 ˚C; D DRM(max Product specification BT168 series MIN. TYP. MAX. UNIT - - 60 K/W - 150 - K/W MIN. TYP. MAX. UNIT 20 50 200 ...
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... Fig.6. Normalised gate trigger voltage T(RMS lead Product specification BT168 series BT169 I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT169 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... GK dVD/dt (V/us) 1000 100 100 150 ( (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT168 series BT169 max typ 0 BT169 0.1ms 1ms 10ms 0. j-lead pulse width t . ...
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... Philips Semiconductors Thyristors logic level for RCD/ GFI/ LCCB Applications MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". September 1997 2.54 0.66 1.6 0.56 4.8 max 5.2 max 12.7 min 0.48 0. Fig.13. TO92; plastic envelope. 5 Product specification BT168 series 4.2 max 2.5 max 0.40 min Rev 1.100 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Product specification BT168 series Rev 1.100 ...