KSD362 Fairchild Semiconductor, KSD362 Datasheet

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KSD362

Manufacturer Part Number
KSD362
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
B/W TV Horizontal Deflection Output
• Collector-Base Voltage : V
• Collector Current : I
• Collector Dissipation : P
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
V
f
FE
C
CBO
T
FE
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
CBO
CEO
EBO
(sat)
(sat)
Classification
Classification
h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
FE
C
=5A
C
=40W(T
CBO
=150V
Parameter
C
=25 C)
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
20 ~ 50
N
KSD362
I
I
I
V
V
I
I
V
C
C
E
C
C
CB
CE
CE
= 1mA, I
= 1mA, I
= 2mA, R
= 5A, I
= 5A, I
Test Condition
= 100V, I
= 5V, I
= 5V, I
B
B
= 0.5A
= 0.5A
E
C
C
C
BE
= 0
= 0
= 5A
= 0.5A
E
40 ~ 80
=
= 0
R
1.Base
1
Min.
150
70
20
8
- 55 ~ 150
2.Collector
Value
150
150
70
40
5
8
Typ.
10
TO-220
70 ~ 140
O
Max.
140
3.Emitter
1.5
20
1
Rev. A, February 2000
Units
W
Units
V
V
V
A
MHz
C
C
V
V
V
V
V
A

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KSD362 Summary of contents

Page 1

... V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T h Classification FE Classification h FE ©2000 Fairchild Semiconductor International KSD362 = =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA 2mA, R ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 *10ms Thermal S/B limitation limitation *200ms 1 S/B limitation 1. Tc=25℃ 2. *single pulse 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 10000 1000 I = 20mA B 100 I = 15mA 10mA 5mA ...

Page 3

... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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