m29dw323d Numonyx, m29dw323d Datasheet

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m29dw323d

Manufacturer Part Number
m29dw323d
Description
32 Mbit 4mb X8 Or 2mb X16, Dual Bank 8 24, Boot Block 3v Supply Flash Memory
Manufacturer
Numonyx
Datasheet

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FEATURES SUMMARY
March 2008
SUPPLY VOLTAGE
ACCESS TIME: 70ns
PROGRAMMING TIME
MEMORY BLOCKS
DUAL OPERATIONS
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
V
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
EXTENDED MEMORY BLOCK
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
PP
/WP PIN for FAST PROGRAM and
V
and Read
V
10µs per Byte/Word typical
Double Word/ Quadruple Byte Program
Dual Bank Memory Array: 8Mbit+24Mbit
Parameter Blocks (Top or Bottom
Location)
Read in one bank while Program or Erase
in other
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Extra block used as security block or to
store additional information
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29DW323DT: 225Eh
Bottom Device Code M29DW323DB:
225Fh
CC
PP
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase
Figure 1. Packages
3V Supply Flash Memory
M29DW323DB
TFBGA48 (ZE)
M29DW323DT
TSOP48 (N)
12 x 20mm
6 x 8mm
FBGA
1/51

Related parts for m29dw323d

m29dw323d Summary of contents

Page 1

... Standby and Automatic Standby ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29DW323DT: 225Eh – Bottom Device Code M29DW323DB: 225Fh March 2008 M29DW323DT M29DW323DB 3V Supply Flash Memory Figure 1. Packages TSOP48 ( 20mm ...

Page 2

... M29DW323DT, M29DW323DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 TABLE OF CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 SUMMARY DESCRIPTION Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3. TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 4. TFBGA48 Connections (Top view through package Table 2. Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 5. Block Addresses (x8 Figure 6. Block Addresses (x16 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Address Inputs (A0-A20) ...

Page 3

... Table 12. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 9. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 10.AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Table 13. Device Capacitance Table 14. DC Characteristics Figure 11.Read Mode AC Waveforms Table 15. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 12.Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 16. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 M29DW323DT, M29DW323DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/51 ...

Page 4

... PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 22. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 APPENDIX A.BLOCK ADDRESSES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 23. Top Boot Block Addresses, M29DW323DT Table 24. Bottom Boot Block Addresses, M29DW323DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 APPENDIX B.COMMON FLASH INTERFACE (CFI Table 25. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 26. CFI Query Identification String Table 27. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Table 28 ...

Page 5

... Table 33. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 M29DW323DT, M29DW323DB 5/51 ...

Page 6

... M29DW323DT, M29DW323DB SUMMARY DESCRIPTION The M29DW323D Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical block archi- tecture ...

Page 7

... A9 A8 A19 M29DW323DT A20 M29DW323DB A18 A17 M29DW323DT, M29DW323DB A16 BYTE V SS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 V CC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 AI05524 ...

Page 8

... M29DW323DT, M29DW323DB Figure 4. TFBGA48 Connections (Top view through package Table 2. Bank Architecture Bank Bank Size A 8 Mbit B 24 Mbit 8/ A17 A2 A6 A18 A20 A19 DQ2 DQ5 A0 DQ0 E DQ8 DQ10 DQ12 ...

Page 9

... Main Blocks Bank A Total of 15 Main Blocks Total of 8 Bank B Parameter (1) Blocks and Table 24. for a full listing of the Block Addresses. M29DW323DT, M29DW323DB Bottom Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 8 KByte or 4 KWord 001FFFh 00E000h 8 KByte or 4 KWord 00FFFFh 010000h 64 KByte or ...

Page 10

... M29DW323DT, M29DW323DB Figure 6. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh Bank B 178000h 64 KByte or 32 KWord 17FFFFh 180000h 64 KByte or 32 KWord 187FFFh 1F0000h 64 KByte or 32 KWord 1F7FFFh Bank A 1F8000h 8 KByte or 4 KWord 1F8FFFh 1FF000h ...

Page 11

... The transition from V t PHPHH Ready/Busy Output (RB). The Ready/Busy pin is an open-drain output that can be used to identify , the memory IL when the device is performing a Program or Erase M29DW323DT, M29DW323DB /Write Protect is Low, even when /Write Protect is High /Write Protect is raised ...

Page 12

... M29DW323DT, M29DW323DB operation. During Program or Erase operations Ready/Busy is Low Ready/Busy is high-im- OL pedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy be- comes high-impedance. See Table 19. 16., Reset/Block Temporary Unprotect AC Wave- forms ...

Page 13

... Block Protection Status or the Reset/Block Tem- porary Unprotect pin status. , the IH Block Protect and Chip Unprotect operations are described in M29DW323DT, M29DW323DB , Chip Enable should CC2 ± 0.2V. For the Standby current CC Table 14., DC Characteristics. , for Program or Erase operations un- CC3 to be applied to some pins ...

Page 14

... V 5Fh (M29DW323DB 81h (factory locked 01h (not factory locked Data Inputs/Outputs DQ15A–1, DQ14-DQ0 Data Output Data Input Hi-Z Hi 0020h , 225Eh (M29DW323DT) ID 225Fh (M29DW323DB 81h (factory locked 01h (not factory locked DQ7-DQ0 Data Input Hi-Z Hi-Z 20h ...

Page 15

... IL bit set at ’0’ back to ’1’. One of the Erase Com- mands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. M29DW323DT, M29DW323DB . If the addressed block is protected then B., Tables 25, 26, 27, 28, 29 and ...

Page 16

... M29DW323DT, M29DW323DB Fast Program Commands There are two Fast Program commands available to improve the programming throughput, by writing several adjacent words or bytes in parallel. The Quadruple Byte Program command is available for x8 operations, while the Double Word Program command is available for x16 operations. Only one bank can be programmed at any one time ...

Page 17

... If all of the selected blocks are protected the Block Erase operation appears to start but will M29DW323DT, M29DW323DB terminate within about 100µs, leaving the data un- changed. No error condition is given when protect- ed blocks are ignored. ...

Page 18

... Resume command will be accepted. An erase can be suspended and resumed more than once. Enter Extended Block Command The M29DW323D has an extra 64KByte block (Extended Block) that can only be accessed using the Enter Extended Block command. Three Bus write cycles are required to issue the Extended Block command ...

Page 19

... 555 55 AAA AA 555 55 AAA 555 55 AAA AA 555 55 AAA or DQ15 when BYTE M29DW323DT, M29DW323DB 3rd 4th 5th Data Add Data Add Data Add Data PD1 PA2 PD2 PA3 PD3 20 80 AAA AA 555 55 80 AAA AA ...

Page 20

... M29DW323DT, M29DW323DB STATUS REGISTER The M29DW323D has a Status Register that pro- vides information on the current or previous Pro- gram or Erase operations executed in each bank. The various bits convey information and errors on the operation. Bus Read operations from any ad- dress within the Bank, always read the Status Register during Program and Erase operations ...

Page 21

... Toggle 0 Toggle 0 Toggle 0 Toggle 0 Toggle 0 Toggle 1 No Toggle Data read as normal 0 Toggle 0 Toggle Figure 8. Toggle Flowchart PASS AI90194 Note Address of Bank being Programmed or Erased. M29DW323DT, M29DW323DB DQ5 DQ3 DQ2 0 – – 0 – – 1 – – Toggle 0 0 Toggle Toggle ...

Page 22

... DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE The Multiple Bank Architecture M29DW323DT and M29DW323DB gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management of the device by allowing code to be executed from one bank while the other bank is being programmed or erased ...

Page 23

... Operating sections of this specification is not implied. Refer also to the Numonyx SURE Pro- gram and other relevant quality documents. Parameter (2,3) +2V during transition and for less than 20ns during transitions. CC M29DW323DT, M29DW323DB Min Max Unit –50 125 °C –65 150 ° ...

Page 24

... M29DW323DT, M29DW323DB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Table 12. Operating and AC Measurement Conditions Parameter ...

Page 25

... 6MHz ±0.2V ±0. Program/Erase V Controller active V PP Program V = 2.7V ±10% CC Program V = 2.7V ±10 1.8mA OL µ –100 OH I (read) and CC1 M29DW323DT, M29DW323DB Min Max ±1 ± 100 / / –0.5 0.8 0. 11.5 12.5 15 0.45 V –0 ...

Page 26

... M29DW323DT, M29DW323DB Figure 11. Read Mode AC Waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 15. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC (1) t Chip Enable Low to Output Transition t LZ ELQX t t Chip Enable Low to Output Valid ...

Page 27

... Program/Erase Valid to RB Low t BUSY WHRL High to Chip Enable Low VCHEL VCS CC Note: 1. Sampled only, not 100% tested. tAVAV VALID tAVWL tELWL tGHWL tWLWH tDVWH Parameter M29DW323DT, M29DW323DB tWLAX tWHEH tWHGL tWHWL tWHDX VALID tWHRL M29DW323D Min 70 Min 0 Min 45 Min 45 Min 0 Min ...

Page 28

... M29DW323DT, M29DW323DB Figure 13. Write AC Waveforms, Chip Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 17. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable Low WLEL Chip Enable Low to Chip Enable High ...

Page 29

... Alternative Toggle/ Toggle Bit Read Operation in the Bank Being Programmed or Erased Parameter Table 15., Read AC Characteristics. M29DW323DT, M29DW323DB Address Outside the Bank Being Programmed or Erased tELQV Alternative Toggle/ Data Toggle Bit Read Operation Outside the Bank Being Programmed or Erased AI08914c ...

Page 30

... M29DW323DT, M29DW323DB Figure 16. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 19. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output Enable Low (1) t PHGL (1) t RHWL RB High to Write Enable Low, Chip Enable Low, ...

Page 31

... M29DW323DT, M29DW323DB inches Typ Min 0.0039 0.0020 0.0394 0.0374 0.0087 0.0067 0.0039 0.4724 0.4685 0.7874 0.7795 0.7244 0.7205 0.0197 – ...

Page 32

... M29DW323DT, M29DW323DB Figure 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline FD FE BALL "A1" Note: Drawing not to scale. Table 21. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data Symbol Typ 6.000 D1 4.000 ddd E 8 ...

Page 33

... Numonyx sales office. Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the Numonyx Sales Office nearest to you. M29DW323DT, M29DW323DB M29DW323DB 70 N ...

Page 34

... M29DW323DT, M29DW323DB APPENDIX A. BLOCK ADDRESSES Table 23. Top Boot Block Addresses, M29DW323DT (Kbytes/ Block Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 15 64/32 16 64/32 17 64/32 18 64/32 19 64/32 20 64/32 21 64/32 22 64/32 23 64/32 24 64/32 25 64/32 26 64/32 27 64/32 28 64/32 29 64/32 30 64/32 31 64/32 34/51 Protection Block (x8) Group Protection Group 000000h–00FFFFh 010000h–01FFFFh Protection Group 020000h– ...

Page 35

... Protection Group 58 64/32 59 64/32 60 64/32 61 64/32 Protection Group 62 64/32 M29DW323DT, M29DW323DB (x8) 200000h–20FFFFh 100000h–107FFFh 210000h–21FFFFh 108000h–10FFFFh 220000h–22FFFFh 110000h–117FFFh 230000h–23FFFFh 118000h–11FFFFh 240000h–24FFFFh 120000h–127FFFh 250000h–25FFFFh 128000h–12FFFFh 260000h–26FFFFh 130000h–137FFFh 270000h–27FFFFh 138000h–13FFFFh 280000h– ...

Page 36

... M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 63 8/4 64 8/4 65 8/4 66 8/4 67 8/4 68 8/4 69 8/4 70 8/4 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 36/51 Protection Block (x8) Group Protection Group 3F0000h–3F1FFFh Protection Group 3F2000h–3F3FFFh Protection Group 3F4000h–3F5FFFh Protection Group 3F6000h–3F7FFFh Protection Group 3F8000h–3F9FFFh Protection Group 3FA000h– ...

Page 37

... Table 24. Bottom Boot Block Addresses, M29DW323DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 15 64/32 16 64/32 17 64/32 18 64/32 19 64/32 20 64/32 21 64/32 22 64/32 23 64/32 24 64/32 25 64/32 26 64/32 27 64/32 28 64/32 29 64/32 30 64/32 Protection Block (x8) Group Protection Group 000000h-001FFFh Protection Group 002000h-003FFFh Protection Group 004000h-005FFFh Protection Group 006000h-007FFFh Protection Group ...

Page 38

... M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 31 64/32 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 64/32 49 64/32 50 64/32 51 64/32 52 64/32 53 64/32 54 64/32 55 64/32 56 64/32 57 64/32 58 64/32 59 64/32 60 64/32 61 64/32 62 64/32 38/51 Protection Block (x8) Group 180000h-18FFFFh 190000h-19FFFFh Protection Group 1A0000h-1AFFFFh 1B0000h-1BFFFFh 1C0000h-1CFFFFh 1D0000h-1DFFFFh Protection Group 1E0000h-1EFFFFh 1F0000h-1FFFFFh 200000h-20FFFFh 210000h-21FFFFh Protection Group 220000h-22FFFFh ...

Page 39

... Note: 1. Used as the Extended Block Addresses in Extended Block mode. Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh Protection Group 3A0000h-3AFFFFh 3B0000h-3BFFFFh 3C0000h-3CFFFFh Protection Group 3D0000h-3DFFFFh 3E0000h-3EFFFFh Protection Group 3F0000h-3FFFFFh M29DW323DT, M29DW323DB (x16) 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1FFFFFh 39/51 ...

Page 40

... M29DW323DT, M29DW323DB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...

Page 41

... Note: For the M29DW323DB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to 1FFFFFh. For the M29DW323DT, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses 000000h to 1F7FFFh. Description V Logic Supply Minimum Program/Erase voltage CC ...

Page 42

... Read only Read and Write Block Protection 00 = not supported number of blocks in per group Temporary Block Unprotect 00 = not supported supported Block Protect /Unprotect 04 = M29DW323D Simultaneous Operations number of blocks in Bank B Burst Mode not supported supported Page Mode not supported page word page word V ...

Page 43

... APPENDIX C. EXTENDED MEMORY BLOCK The M29DW323D has an extra block, the Extend- ed Block, that can be accessed using a dedicated command. This Extended Block is 32 KWords in x16 mode and 64 KBytes in x8 mode used as a security block (to provide a permanent security identifica- tion number store additional information. ...

Page 44

... M29DW323DT, M29DW323DB APPENDIX D. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the memo- ry. The blocks are protected in groups, refer to APPENDIX A., Tables 23 and Protection Groups. Once protected, Program and Erase operations within the protected group fail to change the data ...

Page 45

... Wait 4µ Wait 100µ A0 Wait 4µ Wait 60ns Read DATA DATA NO = 01h YES PASS APPENDIX D., Tables 23 and 24. M29DW323DT, M29DW323DB ++ YES FAIL AI05574 45/51 ...

Page 46

... M29DW323DT, M29DW323DB Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 Note: Block Protection Groups are shown in 46/51 START PROTECT ALL GROUPS CURRENT GROUP = 0 A6, A12, A15 = Wait 4µ Wait 10ms ADDRESS = CURRENT GROUP ADDRESS ...

Page 47

... Wait 4µs READ DATA ADDRESS = GROUP ADDRESS DATA NO = 01h YES ISSUE READ/RESET COMMAND PASS APPENDIX D., Tables 23 and 24. when using the In-System Technique to protect the Extended Block. ID M29DW323DT, M29DW323DB ++ YES ISSUE READ/RESET COMMAND FAIL AI05576 47/51 ...

Page 48

... M29DW323DT, M29DW323DB Figure 23. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND Note: Block Protection Groups are shown in 48/51 START PROTECT ALL GROUPS CURRENT GROUP = WRITE 60h ANY ADDRESS WITH WRITE 60h ANY ADDRESS WITH ...

Page 49

... Toggle and Alternative Toggle Bits Mechanisms added. Table 28., Device Geometry Definition, modified 14 and 15, Toggle and Alternative Toggle Bits Mechanisms modified and Notes 1 renamed and flowchart modified; Note added. Bits. M29DW323DT, M29DW323DB Figure 16. modified) removed from ID Auto Select Command and Bus Operations, BYTE = V ...

Page 50

... M29DW323DT, M29DW323DB Date Version V minimum value updated and I PP Architecture option updated in Block Protect/Unprotect code updated in 19-Dec-2003 7.4 Customer Lockable Extended Block mechanism modified in Memory Block. APPENDIX section and Note 2 added below Flowchart. 23-Mar-2004 8.0 Introduction of the 12-July-2004 9.0 90ns speed class removed from datasheet. ...

Page 51

... Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Please Read Carefully: applications. visiting Numonyx's website at http://www.numonyx.com. Copyright © 11/5/7, Numonyx, B.V., All Rights Reserved. M29DW323DT, M29DW323DB 51/51 ...

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