MUR1100E EIC Semiconductor Incorporated, MUR1100E Datasheet
MUR1100E
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MUR1100E Summary of contents
Page 1
... MUR1100E PRV : 1000 Volts Io : 1.0 Amperes FEATURES : * Ultrafast 75 Nanoescond Recovery Time * High Temperature * Low Forward Voltage * Low Leakage Current * Pb / RoHS Free MECHANICAL DATA * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0 ...
Page 2
... RATING AND CHARACTERISTIC CURVES ( MUR1100E ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM Vdc (approx) NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1 ...