ZVN4525 Zetex Semiconductors, ZVN4525 Datasheet

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ZVN4525

Manufacturer Part Number
ZVN4525
Description
250V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

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ZVN4525E6TA
Manufacturer:
DIODES
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Manufacturer:
MAXIM
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ISSUE 1 - MARCH 2001
250V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
DESCRIPTION
This 250V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DEVICE
ZVN4525E6TA
ZVN4525E6TC
(
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary P-channel Type ZVP4525E6
SOT23-6 package
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
N52
REEL SIZE
(inches)
13
7
TAPE WIDTH (mm)
8mm embossed
8mm embossed
1
QUANTITY
PER REEL
3000 units
10000 units
ZVN4525E6
Top View
SOT23-6

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ZVN4525 Summary of contents

Page 1

... High Voltage Power MOSFET Drivers Telecom call routers Solid state relays ORDERING INFORMATION DEVICE REEL SIZE (inches) ZVN4525E6TA 7 ZVN4525E6TC 13 DEVICE MARKING N52 ISSUE 1 - MARCH 2001 TAPE WIDTH (mm) QUANTITY PER REEL 8mm embossed 3000 units 8mm embossed 10000 units 1 ZVN4525E6 SOT23-6 Top View ...

Page 2

... ZVN4525E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V; TA=25°C)( =10V; TA=70°C)(a) GS Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T =25°C (a) A Linear Derating Factor Operating and Storage Temperature Range ...

Page 3

... ISSUE 1 - MARCH 2001 CHARACTERISTICS 3 ZVN4525E6 ...

Page 4

... ZVN4525E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 ZVN4525E6 5 ...

Page 6

... ZVN4525E6 CHARACTERISTICS 6 ISSUE 1 - MARCH 2001 ...

Page 7

... Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - MARCH 2001 CHARACTERISTICS Gate Charge Test Circuit Switching Time Test Circuit 7 ZVN4525E6 ...

Page 8

... ZVN4525E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 0.110 E 2.60 3.00 0.102 E1 1.50 1.75 0.059 L 0.10 0.60 0.004 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 10° 0° 0° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. ...

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