FZ1200R33KF2-B5 Eupec GmbH, FZ1200R33KF2-B5 Datasheet

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FZ1200R33KF2-B5

Manufacturer Part Number
FZ1200R33KF2-B5
Description
Hochstzulassige Werte / Maximum rated values
Manufacturer
Eupec GmbH
Datasheet
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Spitzenverlustleistung der Diode
maximum power dissipation diode
Isolations-Prüfspannung
insulation test voltage
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Alfons Wiesenthal
approved by: Christoph Lübke
Höchstzulässige Werte / Maximum rated values
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
2
t - value, Diode
T
T
T
T
t
T
t
V
T
RMS, f = 50 Hz, t = 1 min.
RMS, f = 50 Hz, Q
I
I
I
f = 1MHz, T
f = 1MHz, T
V
V
date of publication : 2002-10-31
revision: 2.0
FZ 1200 R 33 KF2_B5
C
C
C
P
P
V
vj
vj
C
C
C
R
vj
CE
CE
GE
= 1 ms, T
= 1 ms
= 1200A, V
= 1200A, V
= 120 mA, V
=25°C, Transistor
= 25°C
= -25°C
= 80°C
= 25 °C
= 0V, t
= 125°C
= 3300V, V
= 0V, V
= -15V ... + 15V
p
= 10ms, T
vj
vj
GE
C
GE
GE
= 25°C, V
= 25°C, V
= 80°C
= 20V, T
CE
GE
= 15V, T
= 15V, T
= V
= 0V, T
PD
GE
typ. 10pC (acc. To IEC 1287)
vj
1 (9)
= 125°C
, T
CE
CE
vj
vj
vj
= 25°C
vj
vj
= 25V, V
= 25V, V
= 25°C
= 125°C
= 25°C
= 25°C
GE
GE
= 0V
= 0V
V
V
I
P
V
V
V
V
V
C,nom.
I
I
C
C
I
I
CRM
P
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
ISOL
GES
RQM
CES
CES
I
I
2
C
tot
F
ies
res
G
t
vorläufige Daten
preliminary data
min.
4,2
-
-
-
-
-
-
-
+/- 20V
3300
3300
1200
2000
2400
1200
2400
1200
typ.
14,7
10,2
3,40
4,30
444
150
5,1
5,1
22
8
-
-
DB_FZ1200R33KF2 B5_2.0.xls
max.
4,25
5,00
400
6,0
5
-
-
-
k A
kW
kW
mA
µC
nA
kV
kV
nF
nF
V
V
A
A
A
V
A
A
V
V
V
2
s

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FZ1200R33KF2-B5 Summary of contents

Page 1

... CRM P 14,7 kW tot V +/- 20V V GES I 1200 2400 A FRM 2 2 444 1200 kW RQM V 10,2 kV ISOL V 5,1 kV ISOL min. typ. max 3,40 4, sat - 4,30 5, 4,2 5,1 6,0 V GE(th 150 - nF ies res µ CES 400 nA GES DB_FZ1200R33KF2 B5_2.0.xls ...

Page 2

... E - 2900 - mWs 1600 - mWs off I - 6000 - sCE CC'+EE' min. typ. max 2,80 3, 2,80 3, 1250 - 1350 - 710 - µ 1320 - µ 680 - mWs rec - 1400 - mWs DB_FZ1200R33KF2 B5_2.0.xls ...

Page 3

... Anschlüsse / terminals M8 3 (9) vorläufige Daten preliminary data min. typ. max 0,0085 K/W thJC - - 0,0170 K 0,006 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg AlSiC AlN > 600 M 4, 1,8 2 1400 g DB_FZ1200R33KF2 B5_2.0.xls ...

Page 4

... Output characteristic (typical) 2400 2000 1600 1200 800 400 0 0,0 0,5 1,0 1,5 FZ 1200 R 33 KF2_B5 15V GE 2,0 2,5 3,0 3,5 4,0 4 VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V 2,0 2,5 3,0 3,5 4,0 4 (9) vorläufige Daten preliminary data ) CE 5,0 5,5 6,0 6,5 7 125°C vj 5,0 5,5 6,0 6,5 7,0 DB_FZ1200R33KF2 B5_2.0.xls ...

Page 5

... FZ 1200 R 33 KF2_B5 Tvj = 25°C Tvj = 125° [V] GE Tvj = 25°C Tvj = 125°C 1,5 2,0 2 (9) vorläufige Daten preliminary data 20V 3,0 3,5 4,0 DB_FZ1200R33KF2 B5_2.0.xls ...

Page 6

... G off , T = 125° 1200 (9) vorläufige Daten preliminary data = rec 1 off = 1 220 1800 2100 2400 = rec G = 1800V , V = ±15V 220nF DB_FZ1200R33KF2 B5_2.0.xls ...

Page 7

... FZ 1200 R 33 KF2_B5 IC,Modul IC,Chip 1000 1500 2000 V [V] CE 1000 1500 2000 V [ (9) vorläufige Daten preliminary data V = ±15V 1 220 nF GE G,off 125°C vj 2500 3000 3500 T = 125°C vj 2500 3000 3500 DB_FZ1200R33KF2 B5_2.0.xls ...

Page 8

... IGBT-Module FZ 1200 R 33 KF2_B5 IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 0,1 Zth: IGBT Zth: Diode 0,01 0,001 0,0001 0,001 i r [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode i 0,01 0,1 t [sec 3,83 2,13 0,03 0,10 7,65 4,25 0,03 0,10 8 (9) vorläufige Daten preliminary data (t) thJC 0,51 2,04 0,30 1,00 1,02 4,08 0,30 1,00 DB_FZ1200R33KF2 B5_2.0.xls ...

Page 9

... Technische Information / Technical Information IGBT-Module IGBT-Modules Äußere Abmessungen / extenal dimensions FZ 1200 R 33 KF2_B5 9 (9) vorläufige Daten preliminary data DB_FZ1200R33KF2 B5_2.0.xls ...

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