2SD1055 Rohm, 2SD1055 Datasheet

no-image

2SD1055

Manufacturer Part Number
2SD1055
Description
Manufacturer
Rohm
Datasheet
Transistors
Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
! ! ! ! Features
1) Low V
2) Complements the 2SB1188 /
! ! ! ! Structure
Epitaxial planar type
NPN silicon transistor
! ! ! ! Absolute maximum ratings (Ta=25°C)
∗1 Single pulse, P
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
V
(I
2SB1182 / 2SB1240
C
CE(sat)
/I
B
= 2A / 0.2A)
CE(sat)
= 0.5V (Typ.)
W
Parameter
.
=20ms
2SD1766
2SD1758
2SD1862
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
! ! ! ! External dimensions (Units : mm)
∗ Denotes h
2SD1766
2SD1862
2
0.65Max.
or lager.
−55~+150
ROHM : MPT3
EIAJ : SC-62
Limits
150
2.5
0.5
ROHM : ATV
40
32
10
(1)
5
2
2
1
0.4 ± 0.1
1.5 ± 0.1
FE
Abbreviated symbol : DB∗
2.54 2.54
6.8 ± 0.2
(2)
(1)
(3)
1.6 ± 0.1
(2)
0.5 ± 0.1
3.0 ± 0.2
4.5
+ 0.2
− 0.1
0.5 ± 0.1
W (T
(3)
A (Pulse) ∗1
A (DC)
0.4 ± 0.1
1.5 ± 0.1
2SD1766 / 2SD1758 / 2SD1862
Unit
C
°C
°C
W
W
=25°C)
1.05
V
V
V
(1) Emitter
(2) Collector
(3) Base
1.5
(1) Base
(2) Collector
(3) Emitter
2.5 ± 0.2
+ 0.2
− 0.1
∗2
∗3
0.45 ± 0.1
0.4
+ 0.1
− 0.05
2SD1758
ROHM : CPT3
EIAJ : SC-63
0.75
2.3±0.2
(1)
0.9
6.5±0.2
5.1
+0.2
−0.1
(2)
2.3±0.2
(3)
0.65±0.1
C0.5
(1) Base
(2) Collector
(3) Emitter
0.5±0.1
0.55±0.1
1.0±0.2
2.3
+0.2
−0.1

Related parts for 2SD1055

2SD1055 Summary of contents

Page 1

... V EBO 2 A (DC (Pulse) ∗1 2.5 0.5 ∗ =25° ∗ °C Tj 150 −55~+150 °C Tstg 2 or lager. 2SD1758 +0.2 2.3 6.5±0.2 −0.1 C0.5 +0.2 5.1 −0.1 0.5±0.1 + 0.1 0.65±0.1 0.75 − 0.05 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) ROHM : CPT3 (1) Base EIAJ : SC-63 (2) Collector (3) Emitter ...

Page 2

Transistors ! ! ! ! Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current 2SD1766,2SD1758 DC current transfer ratio 2SD1862 Collector-emitter saturation voltage Transition frequency Output capacitance ∗ Measured using ...

Page 3

Transistors Ta=25°C 500 200 100 = 100 200 500 1A 2A COLLECTOR CURRENT : I (mA) C Fig.4 Collector-emitter saturation voltage vs. collector current 1000 Ta=25° ...

Related keywords