at45db041d-su-sl955 ATMEL Corporation, at45db041d-su-sl955 Datasheet

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at45db041d-su-sl955

Manufacturer Part Number
at45db041d-su-sl955
Description
At45db041d 4-megabit 2.5-volt Or 2.7-volt Dataflash
Manufacturer
ATMEL Corporation
Datasheet

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Part Number:
AT45DB041D-SU-SL955
Manufacturer:
IXYS
Quantity:
12 000
Features
1. Description
The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a
wide variety of digital voice-, image-, program code- and data-storage applications.
The AT45DB041D supports RapidS serial interface for applications requiring very
high speed operations. RapidS serial interface is SPI compatible for frequencies up to
66 MHz. Its 4,325,376 bits of memory are organized as 2,048 pages of 256 bytes or
264 bytes each. In addition to the main memory, the AT45DB041D also contains two
SRAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a
page in the main Memory is being reprogrammed, as well as writing a continuous data
stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-
tained three step read-modify-write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a RapidS serial interface to sequentially access its data. The simple
sequential access dramatically reduces active pin count, facilitates hardware layout,
Single 2.5V or 2.7V to 3.6V Supply
RapidS
User Configurable Page Size
Page Program Operation
Flexible Erase Options
Two SRAM Data Buffers (256/264 Bytes)
Continuous Read Capability through Entire Array
Low-power Dissipation
Hardware and Software Data Protection Features
Sector Lockdown for Secure Code and Data Storage
Security: 128-byte Security Register
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
– SPI Compatible Modes 0 and 3
– 256 Bytes per Page
– 264 Bytes per Page
– Page Size Can Be Factory Pre-configured for 256 Bytes
– Intelligent Programming Operation
– 2,048 Pages (256/264 Bytes/Page) Main Memory
– Page Erase (256 Bytes)
– Block Erase (2 Kbytes)
– Sector Erase (64 Kbytes)
– Chip Erase (4 Mbits)
– Allows Receiving of Data while Reprogramming the Flash Array
– Ideal for Code Shadowing Applications
– 7 mA Active Read Current Typical
– 25 µA Standby Current Typical
– 5 µA Deep Power-down Typical
– Individual Sector
– Individual Sector
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
®
Serial Interface: 66 MHz Maximum Clock Frequency
4-megabit
2.5-volt or
2.7-volt
DataFlash
AT45DB041D
3595L–DFLASH–4/08
®

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at45db041d-su-sl955 Summary of contents

Page 1

... Green (Pb/Halide-free/RoHS Compliant) Packaging Options 1. Description The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB041D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies MHz ...

Page 2

... To allow for simple in-system reprogrammability, the AT45DB041D does not require high input voltages for programming. The device operates from a single power supply, 2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The AT45DB041D is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK) ...

Page 3

... Block Diagram WP PAGE (256/264 BYTES) BUFFER 1 (256/264 BYTES) SCK CS RESET VCC GND 3595L–DFLASH–4/08 Figure 2- GND 7 VCC FLASH MEMORY ARRAY BUFFER 2 (256/264 BYTES) I/O INTERFACE SI AT45DB041D SOIC Top View SCK 2 7 GND RESET 3 6 VCC ...

Page 4

... Memory Array To provide optimal flexibility, the memory array of the AT45DB041D is divided into three levels of granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illus- trates the breakdown of each level and details the number of pages per sector and block. All program operations to the DataFlash occur on a page-by-page basis ...

Page 5

... A0) and a dummy byte. Following the dummy byte, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin. 3595L–DFLASH–4/08 specification. The Continuous Array Read bypasses both data buffers and leaves the AT45DB041D . To perform a CAR1 5 ...

Page 6

... Following the don’t care bytes, additional pulses on SCK result in data being output on the SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of data. When the end of a page in main AT45DB041D 6 specification. The Continuous Array Read bypasses both ...

Page 7

... The D1H and D3H opcode can be used for lower frequency CAR1 . CAR2 AT45DB041D 7 ...

Page 8

... CS pin, the part will erase the selected block of eight pages. The erase operation is internally self-timed and should take place in a maximum time of t this time, the status register will indicate that the part is busy. AT45DB041D 8 . During this time, the status register will indicate that the part is busy. ...

Page 9

... AT45DB041D PA2/ PA1/ PA0/ A10 A9 A8 Block • • • • • • • • ...

Page 10

... Only those sectors that are not protected or locked down will be erased. The WP pin can be asserted while the device is erasing, but protection will not be activated until the internal erase cycle completes. Command Chip Erase Figure 7-1. Note: AT45DB041D 10 PA6/ PA5/ PA4/ PA3/ A14 A13 ...

Page 11

... Sector Protection Register. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register. 3595L–DFLASH–4/08 AT45DB041D . During this time ...

Page 12

... Disable Sector Protection commands. If the device is power cycled, then the software controlled protection will be disabled. Once the device is powered up, the Enable Sector Protection command should be reissued if sector pro- tection is desired and if the WP pin is not used. AT45DB041D 12 Byte 1 3DH Enable Sector Protection ...

Page 13

... When the WP pin is deasserted; however, the sector protection WPE 2 Disable Sector Command Protection Command – Issue Command Issue Command X Not Issued Yet or 2 Issue Command – Issue Command AT45DB041D , then the content of the Sector CC time) as long as the Enable Sec- WPD 3 Sector Protection Status X Disabled Disabled – Enabled X Enabled ...

Page 14

... Sector Protection Register.: Table 9-2. Sector Number Protected Unprotected Table 9-3. Sectors 0a, 0b Unprotected Protect Sector 0a Protect Sector 0b (Page 8-255) Protect Sectors 0a (Page 0-7), 0b (Page 8-255) Note: AT45DB041D 14 Sector Protection Register Sector 0 (0a, 0b) 0a (Page 0-7) Bit (1) 1. The default value for bytes 0 through 7 when shipped from Atmel x = don’ ...

Page 15

... Command Erase Sector Protection Register Figure 9-2. 3595L–DFLASH–4/08 Byte 1 3DH Erase Sector Protection Register CS Opcode Opcode SI Byte 1 Byte 2 Each transition represents 8 bits AT45DB041D PE Byte 2 Byte 3 Byte 4 2AH 7FH Opcode Opcode Byte 3 Byte 4 , during CFH 15 ...

Page 16

... Command Program Sector Protection Register Figure 9-3. Program Sector Protection Register CS Opcode SI Byte 1 Each transition represents 8 bits AT45DB041D 16 , during which time the Status Register will indicate that the device is busy Opcode Opcode Opcode Data Byte Byte 2 Byte 3 Byte 4 Section 9 ...

Page 17

... Dummy Byte Read Sector Protection Register Opcode X X Each transition represents 8 bits AT45DB041D Byte 1 Byte 2 Byte 3 32H xxH xxH X Data Byte Data Byte ...

Page 18

... Sector Lockdown Register to determine the status of the appropriate sector lockdown bits or bytes and reissue the Sector Lockdown com- mand if necessary. Command Sector Lockdown Figure 10-1. Sector Lockdown CS SI AT45DB041D 18 Byte 1 3DH Opcode Opcode Opcode Byte 1 ...

Page 19

... Each transition represents 8 bits 3595L–DFLASH–4/08 Sector 0 (0a, 0b) (Page 0-7) Bit 7, 6 details the values read from the Sector Lockdown Register. Sector Lockdown Register xx = Dummy Byte Data Byte AT45DB041D 0 (0a, 0b) See Below 0a 0b (Page 8-255) Bit 5, 4 Bit ...

Page 20

... Therefore, the contents of the buffer 1 will be altered from its previous state when this command is issued. Figure 10-3. Program Security Register CS Opcode SI Byte 1 Each transition represents 8 bits AT45DB041D 20 Security Register • • • One-time User Programmable , during which time the Status Register will indicate that the device is busy. If the device P ...

Page 21

... The CS pin must be low while toggling the SCK pin to load the opcode and 3595L–DFLASH–4/08 Opcode X X Each transition represents 8 bits ), the status register can be read to determine whether the XFR AT45DB041D X Data Byte Data Byte Data Byte ...

Page 22

... Main Memory Page to Buffer Transfer, Main Memory Page to Buffer Compare, Buffer to Main Memory Page Program, Main Memory Page Program through Buffer, Page Erase, Block Erase, Sector Erase, Chip Erase and Auto Page Rewrite. AT45DB041D 22 ), the status register will indicate that the part is busy. On com- ...

Page 23

... The device density is indicated using bits and 2 of the status register. For the AT45DB041D, the four bits are 0111 The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices ...

Page 24

... RDPD down, the device will return to the normal standby mode. Command Resume from Deep Power-down Figure 12-2. Resume from Deep Power-Down AT45DB041D 24 time. Once the device has entered the Deep Power-down mode, all instructions EDPD CS SI Each transition represents 8 bits time before the device can receive any commands ...

Page 25

... Section 13.1). , during which time the Status Register will indicate that the device is P Byte 1 3DH CS Opcode Opcode Opcode SI Byte 1 Byte 2 Byte 3 Each transition represents 8 bits AT45DB041D Section 26. ”Ordering Information” on Byte 2 Byte 3 Byte 4 2AH 80H A6H Opcode Byte 4 25 ...

Page 26

... Manufacturer ID codes that are two, three or even four bytes long with the first byte(s) in the sequence being 7FH. A system should detect code 7FH as a “Continuation Code” and continue to read Manufacturer ID bytes. The first non-7FH byte would signify the last byte of Manufacturer ID data. For Atmel (and some other manufacturers), the Manufacturer ID data is comprised of only one byte. AT45DB041D 26 Bit 3 ...

Page 27

... Group C can be executed. The Group B commands using buffer 1 should use Group C commands using buffer 2 and vice versa. Finally, during the internally self- timed portion of a Group D command, only the Status Register Read command should be executed. 3595L–DFLASH–4/08 AT45DB041D 27 ...

Page 28

... Buffer 1 to Main Memory Page Program without Built-in Erase Buffer 2 to Main Memory Page Program without Built-in Erase Page Erase Block Erase Sector Erase Chip Erase Main Memory Page Program Through Buffer 1 Main Memory Page Program Through Buffer 2 AT45DB041D 28 Read Commands Program and Erase Commands Opcode D2H E8H 03H ...

Page 29

... Note: 3595L–DFLASH–4/08 Protection and Security Commands Additional Commands (1) Legacy Commands 1. These legacy commands are not recommended for new designs. AT45DB041D Opcode 3DH + 2AH + 7FH + A9H 3DH + 2AH + 7FH + 9AH 3DH + 2AH + 7FH + CFH 3DH + 2AH + 7FH + FCH 32H 3DH + 2AH + 7FH + 30H ...

Page 30

... D7h E8h Notes Don’t Care AT45DB041D 30 Address Byte Address Byte ...

Page 31

... N/A N Don’t Care AT45DB041D Address Byte ...

Page 32

... The regulator needs to supply this peak current requirement. An under specified regulator can cause current starvation. Besides increasing system noise, current starvation during program- ming or erase can lead to improper operation and possible data corruption. AT45DB041D 32 . During power-up, the internal Power-on Reset circuitry keeps the device in ...

Page 33

... V Output High Voltage OH Notes during a buffer read maximum @ 20 MHz. CC1 2. All inputs are 5 volts tolerant. 3595L–DFLASH–4/08 *NOTICE: + 0.6V CC AT45DB041D (2.5V Version) Ind. -40° 85° C 2.5V to 3.6V Condition CS, RESET all IH inputs at CMOS levels CS, RESET all IH inputs at CMOS levels MHz ...

Page 34

... Page Erase Time (256/264 bytes Block Erase Time (2,048/2,112 bytes Sector Erase Time (65,536/67,584 bytes Chip Erase Time CE t RESET Pulse Width RST t RESET Recovery Time REC AT45DB041D 34 AT45DB041D (2.5V Version) AT45DB041D Min Typ Max Min 6.8 6.8 6.8 6.8 0.1 0.1 0.1 0 ...

Page 35

... MHz) of the RapidS serial case. 3595L–DFLASH–4/08 2.4V AC DRIVING 1.5V LEVELS 0.45V DEVICE UNDER TEST 30 pF period. These timing waveforms are valid over the full frequency range (max- WL AT45DB041D AC MEASUREMENT LEVEL page 36. Waveform 1 shows the SCK signal being ). Timing waveforms 1 and 2 conform ...

Page 36

... Waveform 2 – SPI Mode 3 Compatible (for Frequencies MHz) CS SCK HIGH 21.3 Waveform 3 – RapidS Mode SCK HIGH IMPEDANCE SO SI 21.4 Waveform 4 – RapidS Mode SCK HIGH AT45DB041D CSS VALID OUT VALID ...

Page 37

... Last bit of BYTE-MOSI is clocked into the slave. F. Slave clocks out first bit of BYTE-SO. G. Master clocks in first bit of BYTE-SO. H. Slave clocks out second bit of BYTE-SO. I. Master clocks in last bit of BYTE-SO. 3595L–DFLASH–4/ LSB BYTE-MOSI F AT45DB041D MSB BYTE- LSB 37 ...

Page 38

... MSB Don’t Care 21.8 Command Sequence for Read/Write Operations for Page Size 264 Bytes (Except Status Register Read, Manufacturer and Device ID Read) SI (INPUT) MSB AT45DB041D 38 CMD 8 bits 8 bits 8 bits Page Address Byte/Buffer Address ...

Page 39

... BINARY PAGE SIZE 16 DON'T CARE + BFA7-BFA0 X BFA7-0 X···X, BFA8 Starts self-timed erase/program operation BINARY PAGE SIZE A18- DON'T CARE BITS CMD PA10-7 AT45DB041D BUFFER 2 TO MAIN MEMORY PAGE PROGRAM BUFFER 2 (256/264 BYTES) BUFFER 2 WRITE Completes writing into selected buffer n n+1 ...

Page 40

... BUFFER 1 23.1 Main Memory Page Read CS SI (INPUT) CMD SO (OUTPUT) 23.2 Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer (INPUT) SO (OUTPUT) AT45DB041D 40 FLASH MEMORY ARRAY MAIN MEMORY READ PAGE READ I/O INTERFACE SO ADDRESS FOR BINARY PAGE SIZE A15-A8 A18-A16 A7-A0 ...

Page 41

... ADDRESS BITS A18 - MSB MSB AT45DB041D BFA7 Dummy Byte (opcodes D1H and D3H) 1 Dummy Byte (opcodes D4H and D6H DATA BYTE ...

Page 42

... MSB HIGH-IMPEDANCE SO 24.5 Buffer Read (Opcode D4H or D6H SCK OPCODE MSB HIGH-IMPEDANCE SO AT45DB041D OPCODE ADDRESS BITS A18- MSB ...

Page 43

... MSB OPCODE DON'T CARE MSB AT45DB041D DATA BYTE MSB MSB ...

Page 44

... CS 0 SCK MSB HIGH-IMPEDANCE SO 24.10 Status Register Read (Opcode D7H SCK SI 1 MSB HIGH-IMPEDANCE SO 24.11 Manufacturer and Device Read (Opcode 9FH) CS SCK SI HIGH-IMPEDANCE SO Note: Each transition AT45DB041D OPCODE DON'T CARE ...

Page 45

... The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page within the entire array. 3595L–DFLASH–4/08 START provide address (82H, 85H) END AT45DB041D and data BUFFER WRITE (84H, 87H) BUFFER TO MAIN MEMORY PAGE PROGRAM (83H, 86H) ...

Page 46

... Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000 cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details. AT45DB041D 46 START ...

Page 47

... AT45DB041D-SSU-SL954 (4) AT45DB041D-SSU-SL955 AT45DB041D-SU (3) AT45DB041D-SU-SL954 (4) AT45DB041D-SU-SL955 AT45DB041D-MU-2.5 AT45DB041D-SSU-2.5 AT45DB041D-SU-2.5 Notes: 1. The shipping carrier option is not marked on the devices. 2. Standard parts are shipped with the page size set to 264 bytes. The user is able to configure these parts to a 256-byte page size if desired. ...

Page 48

... Packaging Information 27.1 8M1-A – MLF (VDFN BOTTOM VIEW 2325 Orchard Parkway San Jose, CA 95131 R AT45DB041D Pin 1 ID TOP VIEW A2 A 0.45 D2 Pin #1 Notch (0. TITLE 8M1-A, 8-pad 1.00 mm Body, Very Thin Dual Flat Package No Lead (MLF) SIDE VIEW ...

Page 49

... Colorado Springs, CO 80906 R 3595L–DFLASH–4/ TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) AT45DB041D Ø Ø END VIEW COMMON DIMENSIONS (Unit of Measure = mm) MIN NOM MAX SYMBOL A1 0.10 – ...

Page 50

... It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded. 4. Determines the true geometric position. 5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm. 2325 Orchard Parkway San Jose, CA 95131 R AT45DB041D TOP VIEW ...

Page 51

... Changed Note 1 on page 14 from “0 through 15” to “0 through 7”. The Chip Erase command is supported on devices with date code 0810 and later. Added Chip Erase time. Added part nuber ordering code details for suffixes SL954/955. Added ordering code detail. AT45DB041D Table 15-6. Table 15-7. Table ...

Page 52

... Chip Erase commands (opcodes C7H, 94H, 80H, and 9AH) not be used. 29.1.2 Workaround Use Block Erase (opcode 50H alternative. The Block Erase function is not affected by the Chip Erase issue. 29.1.3 Resolution The Chip Erase feature is supported on devices with data code 0810 and later. AT45DB041D 52 3595L–DFLASH–4/08 ...

Page 53

... Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. © 2008 Atmel Corporation. All rights reserved. Atmel ers are registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. International Atmel Asia ...

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