SI4190DY-T1-GE3 Vishay

SI4190DY-T1-GE3

Manufacturer Part Number

SI4190DY-T1-GE3

Description

N-Ch MOSFET SO-8 BWL 100V 8.8mohm @10V

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI4190DY-T1-GE3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

8.8 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

2.8V @ 250µA

Gate Charge (qg) @ Vgs

58nC @ 10V

Input Capacitance (ciss) @ Vds

2000pF @ 50V

Power - Max

7.8W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0088 Ohms

Forward Transconductance Gfs (max / Min)

58 S

Drain-source Breakdown Voltage

100 V

Continuous Drain Current

20 A

Power Dissipation

7.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI4190DY-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4190DY-T1-GE3

Manufacturer:

MAX

Quantity:

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