IRFBG30L Vishay

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IRFBG30L

Manufacturer Part Number

IRFBG30L

Description

MOSFET N-CH 1000V 3.1A TO-262

Manufacturer

Vishay

Series

HEXFET®r

Specifications of IRFBG30L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5 Ohm @ 1.9A, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

3.1A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

80nC @ 10V

Input Capacitance (ciss) @ Vds

980pF @ 25V

Power - Max

125W

Mounting Type

Through Hole

Package / Case

I²Pak, TO-262 (3 straight leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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