IRFBG30L

Manufacturer Part NumberIRFBG30L
DescriptionMOSFET N-CH 1000V 3.1A TO-262
ManufacturerVishay
SeriesHEXFET®
 


Specifications of IRFBG30L

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant