IRFP3710PBF Unspecified

IRFP3710PBF

Manufacturer Part Number

IRFP3710PBF

Description

MOSFET Power 100V Single N-Channel HEXFET

Manufacturer

Unspecified

Specifications of IRFP3710PBF

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

250 m Ohms

Forward Transconductance Gfs (max / Min)

20 S

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

51 A

Power Dissipation

200 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-247AC

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFP3710PBF

Manufacturer:

TOSHIBA

Quantity:

15 000

Company:

BOSTOCK HK LIMITED

Part Number:

IRFP3710PBF

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFP3710PBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFP3710PBF

Quantity:

8 000

Company:

H&T Electronics

Part Number:

IRFP3710PBF

Quantity:

5 280

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