IRF1010EPBF Unspecified
IRF1010EPBF
Manufacturer Part Number
IRF1010EPBF
Description
MOSFET Power 60V Single N-Channel HEXFET
Manufacturer
Unspecified
Specifications of IRF1010EPBF
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 m Ohms
Forward Transconductance Gfs (max / Min)
69 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
81 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF1010EPBF
Manufacturer:
PANASONIC
Quantity:
10 000
Part Number:
IRF1010EPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF1010EPBF-MXG
Manufacturer:
IR
Quantity:
20 000
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