RJ80530KZ933512

Manufacturer Part NumberRJ80530KZ933512
DescriptionLow Voltage Pentium III Processor with 512 kB L2 Cache
ManufacturerIntel Corporation
RJ80530KZ933512 datasheet
 


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Page 58/74:

Thermal Diode

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®
®
LV Intel
Pentium
III Processor 512K
6.1.2

Thermal Diode

The LV Intel Pentium
the die temperature (T
measurement kit, may monitor the die temperature of the processor for thermal management or
instrumentation purposes.
Note: The reading of the thermal sensor connected to the thermal diode will not necessarily reflect the
temperature of the hottest location on the die. This is due to inaccuracies in the thermal sensor, on-
die temperature gradients between the location of the thermal diode and the hottest location on the
die, and time based variations in the die temperature measurement. Time based variations can
occur when the sampling rate of the thermal diode (by the thermal sensor) is slower than the rate at
which the T
temperature can change.
J
Table 31. Thermal Diode Interface
Ball Name
THERMDP
THERMDN
Table 32. Thermal Diode Parameters
Symbol
n
Diode Ideality Factor (5-150 µA)
n
Diode Ideality Factor (5-300 µA)
NOTES:
1. Intel does not support or recommend operation of the thermal diode under reverse bias. Intel does not
support or recommend operation of the thermal diode when the processor power supplies are not within their
specified tolerance range.
2. Characterized at 100 C
3. Not 100% tested. Specified by design/characterization.
4. Specified for forward bias current = 5 µA (min) and 150 µA (max)
5. Specified for forward bias current = 5 µA (min) and 300 µA (max)
6. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode
equation:
I
= I
FW
where I
= saturation current, q = electronic charge, V
S
Constant, and T = absolute temperature (Kelvin).
58
III
processor 512K has an on-die thermal diode that can be used to monitor
). A thermal sensor located on the motherboard, or a stand-alone
J
Table 31
and
Table 32
provide the diode interface and specifications.
Ball Number
AF13
AF14
1
Parameter
Min
1.0011
1.0003
qV
D
e
nkT
– 1
S
= voltage across the diode, k = Boltzmann
D
Description
Thermal diode anode
Thermal diode cathode
Typ
Max
Unit
Notes
1.0067
1.0122
1, 2, 3, 4, 6
1.0091
1.0178
1, 2, 3, 5, 6
Datasheet