PRLL5818 Philips, PRLL5818 Datasheet
PRLL5818
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PRLL5818 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of 1996 May 03 1999 Apr 22 ...
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... Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages TM(1) incorporating Implotec technology. (1) Implotec is a trademark of Philips. 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 k handbook, halfpage Fig.1 Simplified outline (SOD87) and symbol. MARKING TYPE NUMBER PRLL5817 PRLL5818 PRLL5819 2 Product specifi ...
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... RWM PRLL5817 PRLL5818 PRLL5819 I average forward current F(AV) I non-repetitive peak forward current FSM T storage temperature stg T junction temperature j 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 CONDITIONS amb half sine wave prior to surge max R 3 Product specification MIN. MAX. ...
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... PRLL5817 PRLL5818 PRLL5819 Note 1. Pulse test 300 s; = 0.02. p THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a Note 1. Refer to SOD87 standard mounting conditions. 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 CONDITIONS see Fig 0 see Fig 0 ...
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... Fig.2 Typical forward voltage F(AV) (W) 0 Fig.3 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward current F(RMS) F(AV). 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 MBE634 ( 2 Product specification 1.57 1.42 1 1.5 I F(AV) (A) MBE642 ...
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... Philips Semiconductors Schottky barrier diodes 1 P F(AV) (W) 0 Fig.4 PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward current F(RMS) F(AV F(AV) (W) 0 Fig.5 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward current ...
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... PRLL5817. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. V RWM 0.5 = 0.2 0 (W) 0. (V) PRLL5818. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. MBE640 20 MBE638 40 ...
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... 100 Fig.10 PRLL5819. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 MBE637 0.1 V RWM = 0 (W) 0. (V) 20 Fig.11 PRLL5819. Reverse power dissipation Product specification ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 k (2) L ...
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... Philips Semiconductors Schottky barrier diodes 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 NOTES 10 Product specification ...
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... Philips Semiconductors Schottky barrier diodes 1999 Apr 22 PRLL5817; PRLL5818; PRLL5819 NOTES 11 Product specification ...
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... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...