K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 34

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K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
9. tIS and tIH (input setup and hold) derating
Table 4 - Derating values for DDR2-400, DDR2-533
2.0 V/ns
∆tIS
4.0
+187
3.5
+179
3.0
+167
2.5
+150
2.0
+125
1.5
+83
1.0
0
0.9
-11
Command/
0.8
-25
Address Slew
0.7
-43
rate(V/ns)
0.6
-67
0.5
-110
0.4
-175
0.3
-285
0.25
-350
0.2
-525
0.15
-800
0.1
-1450
∆tIS, ∆tIH Derating Values for DDR2-400, DDR2-533
CK, CK Differential Slew Rate
1.5 V/ns
∆tIH
∆tIS
∆tIH
+94
+217
+124
+89
+209
+119
+83
+197
+113
+75
+180
+105
+45
+155
+75
+21
+113
+51
0
+30
+30
-14
+19
+16
-31
+5
-1
-54
-13
-24
-83
-37
-53
-125
-80
-95
-188
-145
-158
-292
-255
-262
-375
-320
-345
-500
-495
-470
-708
-770
-678
-1125
-1420
-1095
34 of 45
DDR2 SDRAM
1.0 V/ns
Units
∆tIS
∆tIH
+247
+154
ps
+239
+149
ps
+227
+143
ps
+210
+135
ps
+185
+105
ps
+143
+81
ps
+60
+60
ps
+49
+46
ps
+35
+29
ps
+17
+6
ps
-7
-23
ps
-50
-65
ps
-115
-128
ps
-225
-232
ps
-290
-315
ps
-465
-440
ps
-740
-648
ps
-1390
-1065
ps
Rev. 1.1 December 2008
Notes
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