EC4H08C-TL-H ON Semiconductor

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EC4H08C-TL-H

Manufacturer Part Number

EC4H08C-TL-H

Description

Transistors RF Bipolar Power 1.8V DRIVE SERIES

Manufacturer

ON Semiconductor

Specifications of EC4H08C-TL-H

Maximum Operating Frequency

2 GHz

Collector- Emitter Voltage Vceo Max

3.5 V

Emitter- Base Voltage Vebo

2.5 V

Continuous Collector Current

10 mA

Maximum Dc Collector Current

15 mA

Power Dissipation

50 mW

Package / Case

ECSP

Gain Bandwidth Product Ft

24 GHz

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

+ 25 C

Mounting Style

SMD/SMT

Transistor Polarity

NPN

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