2SD1857A Rohm, 2SD1857A Datasheet
2SD1857A
Manufacturer Part Number
2SD1857A
Description
POWER TRANSISTOR
Manufacturer
Rohm
Datasheet
1.2SD1857A.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1857A
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
2SD1857A
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
2SD1857ATV2P
Manufacturer:
ROHM
Quantity:
23 000
Company:
Part Number:
2SD1857ATV2Q
Manufacturer:
COOLER
Quantity:
101
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features
1) High breakdown voltage.(BV
2) Low collector output capacitance.
3) High transition frequency.(f
4) Complements the 2SB1275 / 2SB1236A.
!Absolute maximum ratings (Ta = 25°C)
∗
∗
∗
!Packaging specifications and h
!Electrical characteristics (Ta = 25°C)
∗
*
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
3
Measured using pulse current.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
1 Single pulse Pw=100ms
2
Collector
power
dissipation
Junction temperature
Storage temperature
Denotes h
Printed circuit board 1.7mm thick, collector plating 1cm
When mounted on a 40 x 40 x 0.7mm ceramic board.
Basic ordering unit (pieces)
(Typ. 20pF at V
FE
Package
Marking
Parameter
Type
Code
2SD1857A
2SD2211
2SD1918
h
Parameter
FE
2SD2211,2SD1918
2SD1857A
CB
= 10V)
2SD2211
MPT3
T100
1000
QR
DQ*
Symbol
Tstg
V
V
V
P
Tj
CBO
CEO
I
EBO
Symbol
C
C
BV
BV
BV
V
V
T
I
Cob
I
CE(sat)
BE(sat)
h
2SD1918
CBO
EBO
f
FE
CBO
CEO
EBO
T
= 80MH
CPT3
2500
CEO
TL
Q
−
FE
2
= 160V)
−55 ∼+150
or larger
2SD1857A
Min.
Limits
160
160
120
82
160
160
150
5
−
−
−
−
−
−
1.5
10
5
3
1
2
1
2500
Z
ATV
TV2
PQ
)
−
.
Typ.
80
20
−
−
−
−
−
−
−
−
−
W(Tc=25°C)
A(Pulse)
Max.
390
270
A(DC)
1.5
−
−
−
1
1
2
−
−
Unit
°C
°C
W
W
V
V
V
MHz
Unit
µA
µA
pF
V
V
V
V
V
−
−
∗1
∗2
∗3
I
I
I
V
V
I
I
V
V
V
C
C
E
C
C
CB
EB
/I
/I
CE
CE
CB
= 50µA
= 1mA
= 50µA
!External dimensions (Units : mm)
2SD2211 / 2SD1918 / 2SD1857A
B
B
/I
= 120V
= 4V
= 5V , I
= 10V , I
= 1A/0.1A
= 1A/0.1A
C
2SD2211
2SD1918
2SD1857A
= 5V/0.1A
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
E
E
= − 0.1A , f = 30MHz
= 0A , f = 1MHz
Conditions
0.65Max.
( 1 )
0.8Min.
( 2 )
2.54
6.8
1.0
2.54
( 3 )
2.5
( 1 )
( 2 )
( 3 )
0.5
1.5
0.9
9.5
5.5
4.0
2.5
∗
∗
Taping specifications
1.05
1.5
0.5
C0.5
2.5
0.45
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
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