BU2508A Philips Semiconductors, BU2508A Datasheet

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BU2508A

Manufacturer Part Number
BU2508A
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT93
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
November 1995
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
CEsat
tab
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
tab
1
CONDITIONS
V
T
I
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
-
in free air
C
C
CM
BE
mb
BE
mb
1
2
= 4.5 A; I
= 4.5 A; I
= 4.5 A; I
= 0 V
= 0 V
3
25 ˚C
25 ˚C
B
B
B(end)
= 1.29 A
= 1.1 A
= 1.1 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
4.5
0.4
-65
45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1500
e
1500
c
BU2508A
700
125
700
100
125
150
150
1.0
5.0
0.6
1.0
15
15
8
8
4
6
5
-
-
Rev 1.300
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
V
A
V
V
A
A
A
A
A
s

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BU2508A Summary of contents

Page 1

... B(end) PIN CONFIGURATION tab CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Product specification BU2508A TYP. MAX. UNIT - 1500 V - 700 125 5 0.4 0.6 s SYMBOL MIN ...

Page 2

... B(end (-dI / B(end (-dI / 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 1R 0 sust. Fig.2. Oscilloscope display for V CEO 2 Product specification BU2508A MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13 700 - - 5 1.0 V ...

Page 3

... Silicon Diffused Power Transistor BU2508A IC DIODE IB 20us 26us 64us VCE Fig.3. Switching times waveforms IBend Fig.4. Switching times definitions. LB BU2508A IBend -VBB Fig.5. Switching times test circuit (BU2508A). November 1995 ICM 100 t IBend 0.01 t Fig.6. Typical DC current gain. h ICM 1 1 ...

Page 4

... Fig.13. Transient thermal impedance. C BU2508A 120 110 100 85˚C Fig.14. Normalised power dissipation kHz 4 Product specification BU2508A ts BU2508A 4.5A 3. parameter 85˚ kHz Zth / (K/W) 0.5 0.2 0 1E-04 1E-02 ...

Page 5

... Fig.15. Forward bias safe operating area. T (1) P max line. tot (2) Second-breakdown limits (independent of temperature). I Region of DC operation. II Extension for repetitive pulse operation. November 1995 100 200 500 1000 VCE / V = 25˚ Product specification BU2508A Rev 1.300 ...

Page 6

... Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 15.2 max 14 13.6 2 max 4.25 4.15 2.2 max 0.5 min 5.5 1.15 0.95 11 Fig.16. SOT93; pin 2 connected to mounting base. 6 Product specification BU2508A 4.6 max 2 4.4 21 max 12.7 max 13.6 min 0.5 0.4 M 1.6 Rev 1.300 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Product specification BU2508A Rev 1.300 ...

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