BU2725 Philips Semiconductors, BU2725 Datasheet

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BU2725

Manufacturer Part Number
BU2725
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand V
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
ESD LIMITING VALUES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
V
C
CM
Csat
s
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
C
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Electrostatic discharge capacitor voltage Human body model (250 pF,
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16 kHz
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
1.5 k )
C
Csat
BE
hs
BE
hs
1
= 7.0 A; I
2
= 0 V
= 7.0 A; f = 16 kHz
= 0 V
25 ˚C
3
25 ˚C
B
= 1.75 A
CES
pulses up to 1700V.
SYMBOL
b
TYP.
MIN.
MIN.
Product specification
7.0
5.8
-65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2725AF
MAX.
MAX.
MAX.
1700
e
1700
c
825
825
200
150
150
1.0
6.5
12
30
45
12
30
12
20
45
10
9
-
Rev 1.300
UNIT
UNIT
UNIT
mA
kV
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2725 Summary of contents

Page 1

... kHz kHz Csat PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS 1 Product specification BU2725AF pulses up to 1700V. TYP. MAX. UNIT - 1700 - 825 - 1.0 7.0 - 5.8 6.5 SYMBOL MIN. MAX. ...

Page 2

... CONDITIONS 650 H; C Csat 162 1 B(end Product specification BU2725AF TYP. MAX. UNIT - 3.7 K/W - 2.8 K K/W MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 ...

Page 3

... VCEOsust . Fig.5. Switching times test circuit. CEOsust ICsat hFE 100 VCE = IBend 0.01 t Fig.6. DC current gain Product specification BU2725AF ICsat IBend t - IBM + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb BU2727A/AF Ths = 25 C Ths = 85 C 0.1 1 ...

Page 4

... Fig.11. Normalised power dissipation BU2727A/ 0.1 Ths = 85 C 0.01 Ths = 25 C 0.001 Fig.12. Transient thermal impedance Product specification BU2725AF BU2527AFX,DFX Fig.10. Limit storage and fall time 85˚ kHz Normalised Power Derating PD% with heatsink compound ...

Page 5

... nF 0 B(end) September 1997 VCL 15 10 CFB 5 0 100 Fig.14. Reverse bias safe operating area 0 Product specification BU2725AF BU2727A/AF/D/DF Area where fails occur 1000 1700 VCE / jmax Rev 1.300 ...

Page 6

... Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU2725AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.300 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2725AF Rev 1.300 ...

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