CMPT2222A Central Semiconductor, CMPT2222A Datasheet

CMPT2222A

Manufacturer Part Number

CMPT2222A

Description

Bipolar Small Signal NPN Gen Purpose

Manufacturer

Central Semiconductor

Datasheet

1.CMPT2222A.pdf (2 pages)

Specifications of CMPT2222A

Dc Collector/base Gain Hfe Min

35 at 0.1 mA at 10 V

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Package / Case

SOT-23

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

6 V

Maximum Dc Collector Current

0.6 A

Power Dissipation

350 mW

Maximum Operating Frequency

300 MHz

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

3000 PCS T&R

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CMPT2222ATR

Manufacturer:

CENTRAL

Quantity:

252

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MAXIMUM RATINGS: (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

I CEV

I EBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

f T

C ob

C ib

NPN SILICON TRANSISTOR

SURFACE MOUNT

TEST CONDITIONS

V CB =60V

V CB =60V, T A =125°C

V CE =60V, V EB =3.0V

V EB =3.0V

I C =10μA

I C =10mA

I E =10μA

I C =150mA, I B =15mA

I C =500mA, I B =50mA

I C =150mA, I B =15mA

I C =500mA, I B =50mA

V CE =10V, I C =0.1mA

V CE =10V, I C =1.0mA

V CE =10V, I C =10mA

V CE =1.0V, I C =150mA

V CE =10V, I C =150mA

V CE =10V, I C =500mA

V CE =20V, I C =20mA, f=100MHz

V CB =10V, I E =0, f=1.0MHz

V BE =0.5V, I C =0, f=1.0MHz

SOT-23 CASE

CMPT2222A

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT2222A

type is an NPN silicon transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for small signal, general

purpose and switching applications.

MARKING CODE: C1P

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

Θ JA

MIN

100

300

P D

6.0

0.6

I C

-65 to +150

MAX

600

350

357

300

6.0

0.3

1.0

1.2

2.0

8.0

w w w. c e n t r a l s e m i . c o m

R5 (1-February 2010)

UNITS

°C/W

MHz

μA

°C

Related parts for CMPT2222A

CMPT2222A Summary of contents

Page 1

... V CE =20V =20mA, f=100MHz =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE: C1P SYMBOL ...

Page 2

... CMPT2222A SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz rb’ =10V =20mA, f=31 ...

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