irf1404z International Rectifier Corp., irf1404z Datasheet

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irf1404z

Manufacturer Part Number
irf1404z
Description
Hexfet Power Mosfet - Automotive Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1404Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF1404Z
Manufacturer:
IR
Quantity:
20 000
Part Number:
irf1404zL
Manufacturer:
IR/ST/FSC
Quantity:
12 500
Part Number:
irf1404zPBF
Manufacturer:
VISHAY
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6 000
Part Number:
irf1404zPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
irf1404zSPBF
Manufacturer:
AMD
Quantity:
4 219
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Features
Description
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
TJC
TCS
TJA
TJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(Tested )
C
C
C
C
= 25° C Continuous Drain Current, V
= 100° C Continuous Drain Current, V
= 25° C Continuous Drain Current, V
= 25° C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Power MOSFET utilizes the latest
Ù
Parameter
Parameter
i
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
(Package Limited)
h
TO-220AB
G
IRF1404Z
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
S
D
IRF1404ZS
-55 to + 175
D
y
Max.
in (1.1N
190
2
130
750
220
± 20
320
480
1.5
75
Pak
®
R
Power MOSFET
DS(on)
y
V
m)
Max.
0.65
DSS
I
–––
IRF1404ZS
62
40
IRF1404ZL
D
IRF1404Z
= 75A
PD - 94634A
IRF1404ZL
= 3.7m:
= 40V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1
8/28/03

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irf1404z Summary of contents

Page 1

... PD - 94634A IRF1404Z IRF1404ZS IRF1404ZL ® HEXFET Power MOSFET 40V DSS R = 3.7m: DS(on 75A Pak TO-262 IRF1404ZS IRF1404ZL Max. Units 190 130 A 75 750 220 W 1.5 W/°C ± 320 mJ 480 See Fig.12a, 12b 175 °C 300 (1 ...

Page 2

... IRF1404ZS_L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS /'T 'V Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 2. Typical Output Characteristics 200 175° C 160 120 9.0 10.0 11.0 0 Fig 4. Typical Forward Transconductance IRF1404ZS_L V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage ( 175° 25° 15V 20µs PULSE WIDTH 40 80 120 I D, Drain-to-Source Current (A) Vs ...

Page 4

... IRF1404ZS_L 8000 0V MHZ C iss = SHORTED C rss = oss = 6000 Ciss 4000 2000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 175° C 100.0 10 25° C 1.0 0.1 0.2 0.6 1 Source-toDrain Voltage (V) Fig 7 ...

Page 5

... 75A 10V 1.5 1.0 0.5 125 150 175 -60 -40 -20 0 Fig 10. Normalized On-Resistance 0.0001 0.001 Rectangular Pulse Duration (sec) IRF1404ZS_L 100 120 140 160 180 Junction Temperature (° C) Vs. Temperature Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.01 5 0.1 ...

Page 6

... IRF1404ZS_L D.U 20V GS 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K: .2PF 12V .3PF D ...

Page 7

... Average time in avalanche 125 150 175 D = Duty cycle in avalanche = Transient thermal resistance, see figure 11) thJC (ave) IRF1404ZS_L Allowed avalanche Current vs avalanche pulsewidth, tav assuming ' Tj = 25° C due to avalanche losses. Note case should Tj be allowed to exceed Tjmax 1.0E-03 1.0E-02 1.0E-01 . This is validated for ...

Page 8

... IRF1404ZS_L D.U.T + ƒ x x - x + ‚ -  R x x SD x x Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery Current - + D.U.T. V Waveform Re-Applied ...

Page 9

... OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE INTERNATIONAL RECT IFIER LOGO LOT CODE IRF1404ZS_L - B - 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) ...

Page 10

... IRF1404ZS_L D Pak Package Outline 2 Dimensions are shown in millimeters (inches) D Pak Part Marking Information 2 T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE " ...

Page 11

... TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IRF1404ZS_L IGBT 1- GATE 2- COLLEC- TOR 11 ...

Page 12

... IRF1404ZS_L D Pak Tape & Reel Information 2 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ...

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