IRF1407 International Rectifier, IRF1407 Datasheet

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IRF1407

Manufacturer Part Number
IRF1407
Description
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
Manufacturer
International Rectifier
Datasheet

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Benefits
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
Thermal Resistance
Typical Applications
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs utilizes the lastest processing
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
@ 10V
@ 10V
G
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
130V
Max.
92V
520
330
± 20
390
2.2
4.6
IRF1407
R
®
DS(on)
Power MOSFET
Max.
I
V
0.45
–––
D
62
DSS
TO-220AB
= 130AV
= 0.0078
= 75V
PD - 93907
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
10/11/01

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IRF1407 Summary of contents

Page 1

... Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com AUTOMOTIVE MOSFET G @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 300 (1.6mm from case ) Typ. 0. 93907 IRF1407 ® HEXFET Power MOSFET 75V DSS R = 0.0078 DS(on 130AV D S TO-220AB Max. Units 130V 92V ...

Page 2

... IRF1407 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP 100 BOTTOM 4. 100 0.1 Fig 2. Typical Output Characteristics 3 2 175°C 2.0 1.5 1.0 0.5 0.0 -60 -40 11.0 13.0 Fig 4. Normalized On-Resistance IRF1407 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 130A  V = 10V GS - 100 120 140 160 180 ° ...

Page 4

... IRF1407 100000 0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000. 175°C 100.00 10. 25°C 1.00 0.10 0.0 1 Source-toDrain Voltage (V) Fig 7 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms  0.001 0. Rectangular Pulse Duration (sec) 1 IRF1407 D.U. 10V µ d(off ...

Page 6

... IRF1407 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...

Page 7

... Figure 15, 16). jmax t Average time in avalanche 125 150 175 D = Duty cycle in avalanche = Transient thermal resistance, see figure 11) thJC (ave) IRF1407 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses 1.0E-03 1.0E-02 1.0E-01 . This is validated for jmax jmax · 1/2 ( 1.3· ...

Page 8

... IRF1407 * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane S Low Leakage Inductance Current Transformer - - dv/dt controlled by R ...

Page 9

... LOGO ASSEMBLY LOT CODE Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.10/01 IRF1407 - .32 (. .22 (. ...

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