irf2805 International Rectifier Corp., irf2805 Datasheet
irf2805
Available stocks
Related parts for irf2805
irf2805 Summary of contents
Page 1
... CS R Junction-to-Ambient JA HEXFET( registered trademark of International Rectifier. www.irf.com AUTOMOTIVE MOSFET G ® Power @ 10V (Silicon limited 10V (See Fig. 10V (Package limited) GS Typ. 0. 94428 IRF2805 ® HEXFET Power MOSFET 55V DSS R = 4.7m DS(on 75A D S TO-220AB Max. Units 175 120 ...
Page 2
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
Page 3
VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 100 BOTTOM 4.5V 10 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 ...
Page 4
0V, C iss = SHORTED 8000 C rss = oss = 6000 Ciss 4000 2000 Coss Crss ...
Page 5
LIMITED BY PACKAGE 150 120 100 ° Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE ...
Page 6
D.U 20V 0.01 Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...
Page 7
Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 500 T OP Single Pulse BOTT OM 10% Duty Cycle 104A 400 300 200 100 0 ...
Page 8
D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery ...
Page 9
Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...
Page 10
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...