IRF744 Vishay, IRF744 Datasheet
IRF744
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IRF744 Summary of contents
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... N-Channel MOSFET TO-220 IRF744PbF SiHF744-E3 IRF744 SiHF744 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 8.8 A (see fig. 12 ≤ 150 ° IRF744, SiHF744 Vishay Siliconix SYMBOL LIMIT V 450 DS V ± 8 5 1.0 E 540 125 D dV/dt 3 ...
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... IRF744, SiHF744 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... V Drain-to-Source Voltage ( 91056_02 Fig Typical Output Characteristics, T Document Number: 91056 S-83029-Rev. A, 19-Jan-09 4 °C C 91056_03 = 25 ° 150 °C C 91056_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF744, SiHF744 Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF744, SiHF744 Vishay Siliconix 3000 MHz iss gs 2500 rss oss ds 2000 C 1500 1000 C 500 Drain-to-Source Voltage ( 91056_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 225 Total Gate Charge (nC) 91056_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 91056_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91056 S-83029-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF744, SiHF744 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF744, SiHF744 Vishay Siliconix 91056_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1200 Top 1000 Bottom 800 600 400 200 125 100 Starting T , Junction Temperature (° 3.9 A 5.6 A 8.8 A 150 Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF744, SiHF744 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...