IRF7484 International Rectifier, IRF7484 Datasheet

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IRF7484

Manufacturer Part Number
IRF7484
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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IRF7484
Manufacturer:
BROADCOM
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320
Part Number:
IRF7484Q
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IR
Quantity:
20 000
Part Number:
IRF7484QTRPBF
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IR
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IRF7484QTRPBF
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IR
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Part Number:
IRF7484TRPBF
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IR
Quantity:
34 000
Part Number:
IRF7484TRPBF
Manufacturer:
IR
Quantity:
20 000
Benefits
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
Typical Applications
l
l
l
I
I
I
P
V
E
I
E
T
Symbol
R
R
www.irf.com
D
D
DM
AR
J,
D
GS
AS
AR
θJL
θJA
@ T
@ T
@T
T
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Relay replacement
Anti-lock Braking System
Air Bag
STG
A
A
A
= 25°C
= 70°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
®
ƒ
Power MOSFETs
ƒ
GS
GS
@ 10V
@ 10V
V
G
S
S
S
40V
DSS
1
2
3
4
Top View
R
See Fig.16c, 16d, 19, 20
DS(on)
Typ.
–––
–––
10@V
HEXFET
8
-55 to + 150
7
6
5
Max.
0.02
± 8.0
GS
110
230
2.5
max (mW)
14
11
D
D
D
IRF7484
D
A
A
= 7.0V
®
Power MOSFET
Max.
20
50
SO-8
14A
I
D
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF7484 Summary of contents

Page 1

... Junction-to-Drain Lead θJL R Junction-to-Ambient θJA www.irf.com V R DSS 40V ® Power MOSFETs 4 G Top View @ 10V GS @ 10V GS ƒ ƒ IRF7484 ® HEXFET Power MOSFET max (mW) I DS(on) D 10@V = 7.0V 14A SO-8 Max. Units 14 11 110 2 ...

Page 2

... IRF7484 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com 10000 TOP 1000 BOTTOM 1.8V 100 10 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2.0 14A 1.5 1.0 0.5 0.0 3.0 4.0 -60 -40 Fig 4. Normalized On-Resistance IRF7484 VGS 7.5V 7.0V 4.5V 3.0V 2.5V 2.3V 2.0V 1.8V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 10V GS - 100 120 140 ° ...

Page 4

... IRF7484 100000 0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 150° 0.10 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7 ...

Page 5

... Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7484 + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1 ...

Page 6

... IRF7484 16.0 15.0 14.0 13.0 12 14A 11.0 10.0 9.0 8.0 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 1.8 1.7 1.6 1 250µA 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 - 100 125 150 175 200 Temperature ( °C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature 6 9.40 9.30 9.20 9.10 9.00 8.90 8.80 8.70 8.60 6.0 7.0 8.0 0 Fig 13. Typical On-Resistance Vs. Drain 1. 7.0V ...

Page 7

... I D TOP 6.3A 11A BOTTOM 14A R G Fig 16c. Unclamped Inductive Test Circuit 125 150 ° Fig 16d. Unclamped Inductive Waveforms Fig 18. Basic Gate Charge Waveform IRF7484 15V DRIVER D.U 20V 0.01 Ω (BR)DSS ...

Page 8

... IRF7484 100 Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-06 1.0E-05 1.0E-04 Fig 19. Typical Avalanche Current Vs.Pulsewidth 250 TOP Single Pulse 225 BOTTOM 10% Duty Cycle 14A 200 175 150 125 100 100 Starting Junction Temperature (°C) Fig 20. Maximum Avalanche Energy Vs. Temperature 8 1 ...

Page 9

... QÃ2Ã @TDBI6U@TÃG@6 AS@@ QSP V8UÃPQUDPI6G `Ã2ÃG6TUÃ DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ ) GPUÃ8P @ Q6SUÃIVH7@S IRF7484 DI8C@T HDGGDH@U@ST 9DH HDI H6Y HDI H6Y 6 $"! %'' " ...

Page 10

... IRF7484 SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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