IRF7524D1 International Rectifier, IRF7524D1 Datasheet

IRF7524D1

Manufacturer Part Number

IRF7524D1

Description

FETKY MOSFET & Schottky Diode(Vdss=-20V/ Rds(on)=0.27ohm/ Schottky Vf=0.39V)

Manufacturer

International Rectifier

Datasheet

1.IRF7524D1.pdf (8 pages)

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Price

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Bonase Electronics (HK) Co., Limited

Part Number:

IRF7524D1TR

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Description

Absolute Maximum Ratings

Thermal Resistance Ratings

Notes:

The FETKY

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8

the smallest footprint available in an SOIC outline. This makes the Micro8

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8

environments such as portable electronics and PCMCIA cards.

www.irf.com

Parameter

dv/dt

Pulse width

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

Co-packaged HEXFET

MOSFET and Schottky Diode

P-Channel HEXFET

Generation 5 Technology

Micro8

@ T

Low V

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

STG

-1.2A, di/dt

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Footprint

family of co-packaged HEXFETs and Schottky diodes offer the

300µs – duty cycle

package, with half the footprint area of the standard SO-8, provides

100A/µs, V

Parameter

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Ambient

will allow it to fit easily into extremely thin application

Power

(BR)DSS

, T

PRELIMINARY

150°C

@ -4.5V

FETKY MOSFET & Schottky Diode

T op V ie w

an ideal

-55 to +150

Maximum

IRF7524D1

Maximum

1.25

± 12

-1.7

-1.4

-5.0

-14

0.8

100

Schottky Vf = 0.39V

DS(on)

DSS

Micro8

= -20V

= 0.27

Units

mW/°C

°C/W

Units

V/ns

°C

PD -91648C

01/29/99

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