IRF7822 International Rectifier Corp., IRF7822 Datasheet

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IRF7822

Manufacturer Part Number
IRF7822
Description
HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 5.0mOhm
Manufacturer
International Rectifier Corp.
Datasheet

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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R
The IRF7822 offers particulary low R
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain CurrentQ
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source CurrentQ
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
GS
4.5V)
T
T
T
T
A
A
A
DS(on)
A
= 70°C
= 25°C
= 70°C
= 25°C
and high Cdv/
HEXFET
Symbol
T
J
R
R
V
V
, T
I
I
P
I
DM
I
SM
®
DS
GS
D
S
D
JA
JL
STG
Power MOSFET for DC-DC Converters
SO-8
DEVICE CHARACTERISTICSU
R
Q
Q
Q
–55 to 150
DS
G
sw
oss
IRF7822
(on)
±12
150
150
3.1
3.0
3.8
30
18
Max.
13
40
20
IRF7822
5.0m
44nC
12nC
27nC
G
IRF7822
S
S
S
1
2
3
4
T o p V ie w
PD - 94279
Units
°C/W
°C/W
°C
W
V
A
8
7
6
5
Units
A
D
D
D
D
1
A
07/11/01

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IRF7822 Summary of contents

Page 1

... The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including R , gate charge and Cdv/dt-induced turn-on immunity. ...

Page 2

... IRF7822 Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Current* Gate-Source Leakage I GSS Current Total Gate Chg Cont FET Q G Total Gate Chg Sync FET Q G Pre-Vth Q GS1 Gate-Source Charge ...

Page 3

... ° Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 100000 10000 1000 100 1 6.0 7 Drain-to-Source Voltage (V) Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage IRF7822  V = 24V Total Gate Charge (nC 0V MHZ C iss = SHORTED C rss = C gd ...

Page 4

... IRF7822 100. 175°C 10. 25° 15V 20µs PULSE WIDTH 1.00 1.0 2.0 3 Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01  SINGLE PULSE 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 100 10 1 0.1 0.2 4.0 5.0 Fig 6. Typical Source-Drain Diode ...

Page 5

... STRA TE.. 6 SO-8 Part Marking www.irf.com ° 0 .10 (. IRF7822 LIM .0532 .0688 1 . ...

Page 6

... IRF7822 SO-8 Tape and Reel ( ...

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