IRF9530N International Rectifier, IRF9530N Datasheet
IRF9530N
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IRF9530N Summary of contents
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... Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA G This The low thermal @ -10V GS @ -10V GS 300 (1.6mm from case ) Typ. 0. 91482C IRF9530N ® HEXFET Power MOSFET -100V DSS R = 0.20 DS(on -14A D S TO-220AB Max. Units -14 -10 A -56 ...
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... IRF9530N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... D S Fig 2. Typical Output Characteristics 2.5 -14A 2.0 1.5 1.0 0.5 0.0 A -60 -40 - Junction Temperature ( C) J Fig 4. Normalized On-Resistance Vs. Temperature IRF9530N -4.5V 2 0µ ° -10V 100 120 140 160 180 ° ...
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... IRF9530N iss iss oss C rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. ...
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... Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF9530N D.U. µ d(off ...
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... IRF9530N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 700 600 ...
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... Fig 14. For P-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF9530N + *** ...
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... IRF9530N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...