IRF9Z24N International Rectifier Corp., IRF9Z24N Datasheet
IRF9Z24N
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IRF9Z24N Summary of contents
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... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA HEXFET -10V GS @ -10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– PD -9.1484B IRF9Z24N ® Power MOSFET V = -55V DSS R = 0.175 DS(on -12A D TO-220AB Max. Units -12 -8 0.30 W/° ...
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... IRF9Z24N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Ga te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics ° IRF9Z24N 100 VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT µ LSE -4 75° Drain-to-Source V oltage ( Fig 2 ...
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... IRF9Z24N 700 600 500 400 300 200 100 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 50° °C ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms ectan gular P ulse D uratio n (sec) 1 IRF9Z24N D.U. -10V Pulse Width µ ...
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... IRF9Z24N 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 250 200 ...
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... Fig 14. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF9Z24N + + *** V =10V ...
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... IRF9Z24N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches (. (. & ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...