irf9z34n International Rectifier Corp., irf9z34n Datasheet

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irf9z34n

Manufacturer Part Number
irf9z34n
Description
-55v Single P-channel Hexfet Power Mosfet In A To-220ab Package
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
AR
D
D
DM
AS
AR
J
STG
D
GS
@ T
@ T
JC
CS
JA
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -10V
@ -10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
Max.
TO-220AB
0.45
± 20
-5.0
180
-19
-14
-68
-10
6.8
68
IRF9Z34N
®
R
Power MOSFET
V
DS(on)
Max.
–––
2.2
62
DSS
I
D
= -19A
PD - 9.1485B
= -55V
= 0.10
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
8/25/97

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irf9z34n Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA G Parameter @ -10V GS @ -10V GS Parameter PD - 9.1485B IRF9Z34N ® HEXFET Power MOSFET -55V DSS R = 0.10 DS(on -19A D S TO-220AB Max. -19 -14 - ...

Page 2

... IRF9Z34N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Ga te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics ° IRF9Z34N 100 VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT .5V 20 µ LSE 75° Drain-to-Source V oltage ( Fig 2 ...

Page 4

... IRF9Z34N 1200 rss gd 1000 oss 800 600 400 200 rain-to-S ource V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° ° ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit V 10% 125 150 175 ° 90% V Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRF9Z34N D.U. -10V Pulse Width µs Duty Factor t ...

Page 6

... IRF9Z34N 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 500 400 ...

Page 7

... Fig 14. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF9Z34N + + *** V =10V ...

Page 8

... IRF9Z34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches (. (. & ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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