irfp4232 International Rectifier Corp., irfp4232 Datasheet
irfp4232
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irfp4232 Summary of contents
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... V min (Avalanche) R typ. @ 10V DS(ON) E typ. PULSE I max @ max J G MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f IRFP4232PbF Key Parameters 250 typ. 300 m 30 310 = 100°C 117 C 175 D TO-247AC S MOSFET Max. Units ±20 V ± 240 117 430 W 210 2.9 W/° ...
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... IRFP4232PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... V DS, Drain-to -Source Voltage (V) Fig 5. Typical E vs. Drain-to-Source Voltage PULSE www.irf.com 100 8.0 Fig 4. Normalized On-Resistance vs. Temperature 1000 190 200 Fig 6. Typical E IRFP4232PbF 1000 VGS TOP 15V 10V 8.0V BOTTOM 7.0V 100 10 ≤ 60µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) Fig 2 ...
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... IRFP4232PbF 1600 L = 220nH 1400 C= 0.4µF 1200 C= 0.3µF C= 0.2µF 1000 800 600 400 200 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 12000 0V MHZ C iss = SHORTED 10000 C rss = oss = 8000 Ciss 6000 4000 ...
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... J τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRFP4232PbF 1000 TOP 800 BOTTOM 600 400 200 100 125 Starting Junction Temperature (°C) 200 ton= 1µs Duty cycle = 0.25 Half Sine Wave 160 ...
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... IRFP4232PbF D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit DUT 0 1K Fig 20a. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...
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... Fig 21a. t and E Test Circuit st PULSE Fig 21c D.U. ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com Fig 21b. t Test Waveforms PULSE d(on) Fig 22b. Switching Time Waveforms IRFP4232PbF Test Waveforms d(off ...
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... IRFP4232PbF TO-247AC package is not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.25mH 25Ω 42A ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ approximately 90°C. ...