IRFR024N International Rectifier, IRFR024N Datasheet

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... Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ...

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IRFR/U024N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4. rain-to-S ource V oltage ( Fig 1. Typical Output Characteristics ...

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IRFR/U024N 700 600 oss ds C iss 500 400 300 200 ...

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ase T em perature (° Fig 9. Maximum Drain Current Vs. Case Temperature 0.5 ...

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IRFR/U024N 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

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D.U Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt Test Circuit + Circuit Layout ...

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IRFR/U024N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 ...

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Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265 ) 6.35 (.250 ) - A - 5.46 (.215 ) 5.21 (.205 ) 4 1.52 (.06 0) 1.15 (. 2.28 (.09 ...

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IRFR/U024N Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches ...

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...