IRFR2407 International Rectifier Corp., IRFR2407 Datasheet

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IRFR2407

Manufacturer Part Number
IRFR2407
Description
Manufacturer
International Rectifier Corp.
Datasheet

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0
Description
Seventh Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
AR
DM
STG
D
GS
AS
AR
J
@ T
@ T
JC
JA
JA
Surface Mount (IRFR2407)
Straight Lead (IRFU2407)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
@T
For recommended footprint and soldering techniques refer to application note #AN-994
C
C
C
= 25°C
= 100°C
= 25°C
This benefit, combined with the fast
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Power Dissipation
®
Power MOSFETs from
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
IRFR2407
–––
–––
–––
D-Pak
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
Max.
42
29
0.71
170
110
± 20
130
5.0
25
11
®
IRFU2407
R
Power MOSFET
DS(on)
I-Pak
Max.
V
110
I
1.4
50
D
DSS
= 42A
IRFR2407
IRFU2407
= 0.026
= 75V
PD -93862
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
3/1/00

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IRFR2407 Summary of contents

Page 1

... Surface Mount (IRFR2407) Straight Lead (IRFU2407) Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Description ® Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ...

Page 2

IRFR/U2407 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 ° ...

Page 4

IRFR/U2407 4000 0V, C iss = rss = oss = 3000 Ciss 2000 1000 Coss Crss ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 SINGLE PULSE ...

Page 6

IRFR/U2407 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com Peak ...

Page 8

IRFR/U2407 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRFR/U2407 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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