IRG7PH35UD-EP International Rectifier, IRG7PH35UD-EP Datasheet

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IRG7PH35UD-EP

Manufacturer Part Number
IRG7PH35UD-EP
Description
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH35UD-EP

Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
50
Ic @ 100c (a)
25
Vce(on)@25c Typ (v)
1.90
Vce(on)@25c Max (v)
2.20
Ets Typ (mj)
1.68
Ets Max (mj)
2.15
Vf Typ
2.80
Pd @25c (w)
180
Environmental Options
PbF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG7PH35UD-EP
Quantity:
8 000
Company:
Part Number:
IRG7PH35UD-EP
Quantity:
200
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
1
Features
• Low V
• Low switching losses
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Ultra fast soft recovery co-pak diode
• Tight parameter distribution
• Lead-Free
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
Absolute Maximum Ratings
V
I
I
I
I
I
I
I
I
V
P
P
T
T
Thermal Resistance
R
R
R
R
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
NOMINAL
CM
LM
F
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
low V
@ T
@ T
@ T
@ T
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
= 25°C
= 100°C
CE (ON)
CE (ON)
and low switching losses
trench IGBT technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
temperature co-efficient
LM

GE
=15V
Parameter
Parameter
d
GE
=20V
G
f
n-channel
IRG7PH35UDPbF
Gate
C
E
G
C
TO-247AC
IRG7PH35UDPbF
IRG7PH35UD-EP
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
G C E
10 lbf·in (1.1 N·m)
Collector
-55 to +150
C
Max.
1200
Typ.
0.24
±30
180
–––
–––
50
25
20
60
80
50
25
80
70
40
V
IRG7PH35UD-EP
T
CE(on)
V
I
J(max)
NOMINAL
CES
C
TO-247AD
Max.
typ. = 1.9V
= 1200V
0.65
Emitter
0.70
–––
–––
= 150°C
G C E
= 20A
E
www.irf.com
Units
Units
02/08/10
°C/W
°C
W
V
A
V

Related parts for IRG7PH35UD-EP

IRG7PH35UD-EP Summary of contents

Page 1

... Parameter f IRG7PH35UDPbF IRG7PH35UD- 1200V CES I = 20A NOMINAL T = 150°C J(max) V typ. = 1.9V CE(on TO-247AC TO-247AD IRG7PH35UD- Collector Emitter Max. 1200 ±30 180 70 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. Typ. ...

Page 2

... IRG7PH35UDPbF/IRG7PH35UD-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... Tc = 25° 150°C Single Pulse 0. 100 V CE (V) Fig Forward SOA ≤ 25°C, T 150° www.irf.com IRG7PH35UDPbF/IRG7PH35UD- Frequency ( kHz ) Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS 200 150 100 50 125 150 1000 100 10µsec 100µ ...

Page 4

... IRG7PH35UDPbF/IRG7PH35UD- (V) Fig. 6- Typ. IGBT Output Characteristics T = -40° 30µ (V) Fig Typ. IGBT Output Characteristics T = 150° 30µ 10A 20A 40A ...

Page 5

... E ON 2500 2000 1500 1000 500 (Ω) Fig Typ. Energy Loss vs 150° 680µ 600V www.irf.com IRG7PH35UDPbF/IRG7PH35UD- vs 1000 OFF 10Ω 15V T = 150° 680µ 10000 1000 ...

Page 6

... IRG7PH35UDPbF/IRG7PH35UD- 5.0Ω 10Ω 47Ω 100Ω (A) Fig Typ. Diode 150° 200 400 600 800 1000 1200 1400 1600 di F /dt (A/µs) Fig Typ. Diode 600V 15V ...

Page 7

... Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRG7PH35UDPbF/IRG7PH35UD-EP 400 500 600 τ J τ J τ 1 τ 1 Ci= τi/Ri SINGLE PULSE Ci ...

Page 8

... IRG7PH35UDPbF/IRG7PH35UD-EP DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L -5V DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit VCC VCC C force 100K D1 22K DUT G force E force Fig.C.T.5 - BVCES Filter Circuit DUT VCC Rg Fig.C.T.2 - RBSOA Circuit R = VCC ICM DUT Rg Fig.C.T.4 - Resistive Load Circuit C sense 0.0075µ ...

Page 9

... I 500 CE 400 300 200 5% I 100 0 Eoff Loss -100 -0.5 0 0.5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J www.irf.com IRG7PH35UDPbF/IRG7PH35UD-EP 800 40 700 35 600 30 500 25 400 20 300 15 200 10 CE 100 5 0 -100 -5 1.5 2 Fig. WF2 - Typ. Turn-on Loss Waveform ...

Page 10

... IRG7PH35UDPbF/IRG7PH35UD-EP TO-247AC package is not recommended for Surface Mount Application. 10 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & www.irf.com ...

Page 11

... TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG7PH35UDPbF/IRG7PH35UD-EP $% Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

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