IRGR3B60KD2 International Rectifier, IRGR3B60KD2 Datasheet

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IRGR3B60KD2

Manufacturer Part Number
IRGR3B60KD2
Description
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.
Manufacturer
International Rectifier
Datasheet

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Features
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
V
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
Wt
Absolute Maximum Ratings
Thermal / Mechanical Characteristics
C
C
CM
LM
F
F
FM
www.irf.com
J
STG
CES
GE
D
D
θJC
θJC
θJA
@ Tc = 25°C
@ Tc = 100°C
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
Junction-to-Case- IGBT
Junction-to-Case- Diode
Junction-to-Ambient, (PCB Mount)
Weight
Parameter
Parameter
c
d
G
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
C
E
IRGR3B60KD2
-55 to +150
Max.
Typ.
15.6
15.6
15.6
D-Pak
±20
600
–––
–––
–––
7.8
4.2
6.0
3.2
0.3
52
21
V
I
t
V
C
sc
CES
CE(on)
= 4.2A, T
> 10µs, T
= 600V
Max.
typ. = 1.9V
–––
2.4
8.8
50
PD - 94601A
C
J
=100°C
=150°C
03/24/03
Units
Units
°C/W
°C
W
V
A
V
g
1

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IRGR3B60KD2 Summary of contents

Page 1

... Junction-to-Ambient, (PCB Mount) R θJA Wt Weight www.irf.com G n-channel Parameter c 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– d ––– ––– 94601A IRGR3B60KD2 600V CES I = 4.2A, T =100° > 10µs, T =150° typ. = 1.9V CE(on) D-Pak Max ...

Page 2

... IRGR3B60KD2 Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... C J www.irf.com Fig Power Dissipation vs. Case 100 10 µs 10 100 µs 1ms 1 10ms DC 0 1000 10000 10 Fig Reverse Bias SOA IRGR3B60KD2 100 120 140 160 T C (°C) Temperature 100 150°C; V =15V J GE 1000 3 ...

Page 4

... IRGR3B60KD2 18V VGE = 15V 20 VGE = 12V VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = -40° 80µ 18V VGE = 15V 20 VGE = 12V VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 150° ...

Page 5

... Fig Typical V vs Fig Typ. Transfer Characteristics vs IRGR3B60KD2 (V) vs 25° 25° 150° Gate-to-Source Voltage ( 50V 10µs ...

Page 6

... IRGR3B60KD2 250 200 150 100 Fig Typ. Energy Loss vs 150°C; L=2.5mH 100Ω 250 200 150 100 100 200 Ω ) Fig Typ. Energy Loss vs 150°C; L=2.5mH 3.0A 1000 E ON ...

Page 7

... 400 350 300 250 200 150 100 250 300 vs. di /dt F Fig Typical Diode 400V IRGR3B60KD2 100 200 300 400 Ω) vs 150° 3. 100Ω 6.0A 200Ω 330Ω 470 Ω 3.0A 1.5A 50 100 ...

Page 8

... IRGR3B60KD2 1000 Cies 100 Coes 10 Cres (V) Fig. 22- Typ. Capacitance vs 0V 1MHz 100 Ω 60 200Ω 330Ω 470Ω (A) Fig Typical Diode 150° ...

Page 9

... τ J τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRGR3B60KD2 R τi (sec) Ri (°C/ τ 0.990 0.000087 C τ 1.412 0.000426 2 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.01 0.1 R τi (sec) Ri (°C/W) 3 ...

Page 10

... IRGR3B60KD2 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C.SOA Circuit 10 L VCC 80 V DUT Driver 360V DC DUT DUT Rg Fig.C.T.5 - Resistive Load Circuit L + DUT - Rg Fig.C.T.2 - RBSOA Circuit diode clamp / DUT DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit CC CM VCC www.irf.com 480V ...

Page 11

... Fig. WF2- Typ. Turn-on Loss Waveform @ T 500 15 450 12 400 9 350 300 6 250 3 200 150 0 100 - 0.40 0.50 Fig. WF4- Typ. S.C Waveform @ T IRGR3B60KD2 Vce 9 Ice 8 90% Ice 7 10% Ice Vce 1 0 Eon -1 Loss -2 1 1.2 1.4 Time (uS) = 150°C using Fig. CT.4 ...

Page 12

... IRGR3B60KD2 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) Notes: T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRF R120 WITH ASSEMBLY LOT CODE 9U1P Notes: T his part marking information applies to devices produced after 02/26/2001 ...

Page 13

... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.03/03 IRGR3B60KD2 TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) FEED DIRECTION ...

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