IRL2910 International Rectifier, IRL2910 Datasheet
IRL2910
Available stocks
Related parts for IRL2910
IRL2910 Summary of contents
Page 1
... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA G This The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– 0.50 ––– 91375B IRL2910 ® HEXFET Power MOSFET 100V DSS R = 0.026 DS(on 55A D S TO-220AB Max. Units ...
Page 2
... IRL2910 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
Page 3
... Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 0.0 A 5.0 5.5 6.0 -60 -40 - Junction T em perature (° Fig 4. Normalized On-Resistance IRL2910 2 0µ ° rain-to-S ource V oltage ( ...
Page 4
... IRL2910 iss iss rss rain-to-S ourc e V oltage ( Fig 5 ...
Page 5
... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRL2910 D.U. µ d(off ...
Page 6
... IRL2910 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform ...
Page 7
... Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V GS di/dt dv/ Forward Drop I SD IRL2910 DD * ...
Page 8
... IRL2910 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415 ) 10.29 (.405 ) 2.87 (.113 ) 2.62 (.103 ) 15.24 (.600 ) 14.84 (.584 ) 1 14 .09 (. .47 (. .40 (. .15 (. .54 (. ING & TOL 82. ...