IRL520N IRF, IRL520N Datasheet
IRL520N
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IRL520N Summary of contents
Page 1
... CS R Junction-to-Ambient JA HEXFET TO-220AB Max. @ 10V GS @ 10V GS 0.32 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91494A IRL520N ® Power MOSFET V = 100V DSS R = 0.18 DS(on 10A D Units 10 7 W/°C ± ...
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... IRL520N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... 2.5 2.0 1.5 1.0 0.5 0.0 A -60 -40 - Junction T em perature (° Fig 4. Normalized On-Resistance IRL520N 2 0µ ° rain-to-S ource V oltage ( ...
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... IRL520N iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ...
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... Duty Factor Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRL520N D.U. µ d(off ...
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... IRL520N 0.0 1 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform ...
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... Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V GS di/dt dv/ Forward Drop I SD IRL520N DD * ...
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... IRL520N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...