IRL540N IRF, IRL540N Datasheet

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IRL540N

Manufacturer Part Number
IRL540N
Description
HEXFET Power MOSFET
Manufacturer
IRF
Datasheet

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Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
STG
D
GS
AS
AR
J
@ T
@ T
JC
CS
JA
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
@T
C
C
Previous Datasheet
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
PRELIMINARY
GS
GS
@ 10V
@ 10V
To Order
Index
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
Next Data Sheet
Max.
TO-220AB
0.63
± 16
120
310
9.4
4.3
94
30
21
18
®
IRL540N
R
Power MOSFET
DS(on)
V
Max.
–––
1.6
DSS
62
I
D
= 30A
= 100V
= 0.044
PD - 9.1495
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
8/14/96

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IRL540N Summary of contents

Page 1

... Junction-to-Ambient JA Index Next Data Sheet PRELIMINARY HEXFET 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– To Order PD - 9.1495 IRL540N ® Power MOSFET V = 100V DSS R = 0.044 DS(on 30A D TO-220AB Max. Units 120 94 W 0.63 W/° ...

Page 2

... Previous Datasheet IRL540N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...

Page 3

Previous Datasheet 1000 VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

... Previous Datasheet IRL540N 3000 1MHz iss rss oss iss 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 175° 25°C ...

Page 5

Previous Datasheet Case Temperature (°C) C Fig 9. Maximum Drain Current Vs. Case Temperature ...

Page 6

... Previous Datasheet IRL540N 10V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Index 800 15 V 600 ...

Page 7

Previous Datasheet Peak Diode Recovery dv/dt Test Circuit D.U Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple * ...

Page 8

... Previous Datasheet IRL540N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches (. (. ...

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