IRL540N IRF, IRL540N Datasheet
IRL540N
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IRL540N Summary of contents
Page 1
... Junction-to-Ambient JA Index Next Data Sheet PRELIMINARY HEXFET 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– To Order PD - 9.1495 IRL540N ® Power MOSFET V = 100V DSS R = 0.044 DS(on 30A D TO-220AB Max. Units 120 94 W 0.63 W/° ...
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... Previous Datasheet IRL540N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...
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Previous Datasheet 1000 VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...
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... Previous Datasheet IRL540N 3000 1MHz iss rss oss iss 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 175° 25°C ...
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Previous Datasheet Case Temperature (°C) C Fig 9. Maximum Drain Current Vs. Case Temperature ...
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... Previous Datasheet IRL540N 10V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Index 800 15 V 600 ...
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Previous Datasheet Peak Diode Recovery dv/dt Test Circuit D.U Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple * ...
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... Previous Datasheet IRL540N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches (. (. ...