IXDD430 IXYS Corporation, IXDD430 Datasheet

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IXDD430

Manufacturer Part Number
IXDD430
Description
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Manufacturer
IXYS Corporation
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
IXDD430YI
Manufacturer:
SANYO
Quantity:
6 238
Copyright © IXYS CORPORATION 2004
Features
• Built using the advantages and compatibility
• Latch-Up Protected
• High Peak Output Current: 30A Peak
• Wide Operating Range: 8.5V to 35V
• Under Voltage Lockout Protection
• Ability to Disable Output under Faults
• High Capacitive Load
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON / OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Limiting di/dt Under Short Circuit
• Class D Switching Amplifiers
of CMOS and IXYS HDMOS
Drive Capability: 5600 pF in <25ns
Ordering Information
P a rt N u m b e r
IX D D 4 3 0 Y I
IX D D 4 3 0 C I
IX D N 4 3 0 Y I
IX D N 4 3 0 C I
IX D S 4 3 0 S I
IX D I4 3 0 C I
IX D I4 3 0 Y I
TM
IXDN430 / IXDI430 / IXDD430 / IXDS430
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
P a c k a g e T yp e
processes
5 -p in T O -2 6 3
5 -p in T O -2 2 0
5 -p in T O -2 6 3
5 -p in T O -2 2 0
5 -p in T O -2 6 3
5 -p in T O -2 2 0
2 8 -p in S O IC
General Description
The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high
current gate drivers specifically designed to drive MOSFETs
and IGBTs to their minimum switching time and maximum
practical frequency limits. The IXD_430 can source and sink
30A of peak current while producing voltage rise and fall times
of less than 30ns. The input of the drivers are compatible with
TTL or CMOS and are fully immune to latch up over the entire
operating range. Designed with small internal delays, cross
conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in
operating voltage and power make the drivers unmatched in
performance and value.
The IXD_430 incorporates a unique ability to disable the output
under fault conditions. The standard undervoltage lockout is at
12.5V which can also be set to 8.5V in the IXDS430SI. When a
logical low is forced into the Enable inputs, both final output
stage MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD430 enters a tristate mode and
enables a Soft Turn-Off of the MOSFET when a short circuit is
detected. This helps prevent damage that could occur to the
MOSFET if it were to be switched off abruptly due to a dv/dt
over-voltage transient.
The IXDN430 is configured as a noninverting gate driver, and the
IXDI430 is an inverting gate driver. The IXDS430 can be configured
either as a noninverting or inverting driver. The IXD_430 are available
in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the
TO-263 (YI) surface mount packages. CT or 'Cool Tab' for the 28-
pin SOIC package refers to the backside metal heatsink tab.
-5 5 °C to + 1 2 5 °
-5 5 °C to + 1 2 5 °
-5 5 °C to + 1 2 5 °
-5 5 °C to + 1 2 5 °
T e m p . R a n g e
First Release
In ve rtin g w ith E n a b le
N o n In ve rtin g w ith
C o n fig u ra tio n
In ve rtin g / N o n
N o n In ve rtin g
a n d U V S E L
In ve rtin g
E n a b le
DS99045B(8/04)

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IXDD430 Summary of contents

Page 1

... Enable inputs, both final output stage MOSFETs (NMOS and PMOS) are turned off result, the output of the IXDD430 enters a tristate mode and enables a Soft Turn-Off of the MOSFET when a short circuit is detected. This helps prevent damage that could occur to the MOSFET if it were to be switched off abruptly due to a dv/dt over-voltage transient ...

Page 2

... Figure 1A - IXDD430 (Non Inverting With Enable) Diagram Vcc GND Figure 1B - IXDN430 (Non-Inverting) Diagram Vcc 1K IN GND Vcc 1K IN GND Figure 1D - IXDS430 (Inverting and Non Inverting with Enable) Diagram Vcc 1K IN 400K EN INV GND Note: Out P and Out N are connected together in the 5 lead TO-220 and TO-263 packages. ...

Page 3

... Storage Temperature - 150 o C Lead Temperature (10 sec) 300 o C Electrical Characteristics Unless otherwise noted 8.5V ≤ All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions bol Param eter V High input v oltage IH V Low input v oltage IL V ...

Page 4

... Electrical Characteristics Unless otherwise noted, temperature over -55 All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions. Symbol Parameter V High input voltage IH V Low input voltage IL V Input voltage range IN R Output resistance OH @ Output high R Output resistance OL @ Output Low t Rise time ...

Page 5

... GND Ground Select Under UVSEL Voltage Level * This pin is used only on the IXDD430, and is N/C (not connected) on the IXDI430 and IXDN430. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Figure 2 - Characteristics Test Diagram C ...

Page 6

... Load Capacitance (pF) Rise and Fall Times vs. Temperature Fig 5600 pF, Vcc = 18V -60 - Temperature (C) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig 15000 pF 20 10000 pF 5600 1000 Fig. 6 13V 30 18V 35V 25 20 ...

Page 7

... Supply Current vs. Load Capacitance Vcc = 25V 400 350 2 MHz 1 MHz 300 250 200 500 kHz 150 100 100 kHz 50 50 kHz 10 kHz 0 1000 10000 Load Capacitance (pF) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig. 10 1000 100 10 0.1 100000 Fig. 12 1000 100 z 0.1 100000 Fig. 14 1000 100 10 0.1 100000 7 Supply Current vs ...

Page 8

... Supply Voltage (V) Fig. 19 Propagation Delay Times vs. Temperature C = 5600pF, Vcc = 18V ONDLY 40 t OFFDLY -60 - Temperature (C) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig. 16 1000 100 100000 Fig Fig. 20 0.6 0.5 0.4 0.3 0.2 ...

Page 9

... V cc (V) P Channel Output Current vs. Temperature Fig. 25 Vcc = 18V -60 - Temperature (C) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig. 22 0.25 0.2 0.15 0.1 0. Fig Fig ...

Page 10

... Figure 27 - Typical circuit to decrease di/dt during turn-off Figure 28 - IXDD430 Application Test Diagram One Shot Circuit NOT1 CD4049A Ros 1Mohm Cos 1pF EN IXDD430 VCC VCCA VCC VIN GND - - SUB NAND NOT2 CD4011A CD4049A R Q NOT3 NOR1 CD4049A CD4001A NOR2 CD4001A SR Flip-Flop 10 IXDN430 / IXDI430 / IXDD430 / IXDS430 ...

Page 11

... One Shot circuit between the IXDD430 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD430 input, and this pulse will reset the SRFF outputs to normal operation. When a short circuit occurs, the voltage drop across the low- value, current-sensing resistor, (Rs=0 ...

Page 12

... Figure 29 will cause biased off. This results in Q1 collector being pulled high voltage CMOS logic high output. The high voltage CMOS logical EN output applied to the IXDD430 EN input will enable it, allowing the gate driver to fully function Amp output driver. ...

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