KSB834 Fairchild Semiconductor, KSB834 Datasheet
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Manufacturer Part Number
KSB834
Description
Ksb834 Pnp Silicon Epitaxial Transistor
Manufacturer
Fairchild Semiconductor
Available stocks
Manufacturer:
FAIRCHILD/仙童
©2001 Fairchild Semiconductor Corporation
Low Frequency Power Amplifier
• Complement to KSD880
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
P
BV
V
V
V
I
P
T
T
I
I
h
h
V
V
f
C
t
T
t
FE
B
Symbol
C
CBO
EBO
T
ON
F
FE1
FE2
C
J
STG
STG
CBO
CEO
EBO
C
CE
BE
ob
CEO
(on)
(sat)
Classification
Symbol
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
T
a
C
C
=25 C)
=25 C unless otherwise noted
Parameter
=25 C)
KSB834
V
V
I
V
V
I
V
V
V
f = 1MHz
V
I
R
C
C
B1
CB
EB
CE
CE
CE
CE
CB
CC
L
= - 50mA, I
= - 3A, I
= 30
= - I
60 ~ 120
= - 7V, I
= - 60V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 10V, I
= -30V, I
Test Condition
B2
O
= - 0.2A
B
C
= - 0.3A
C
C
C
C
C
E
B
E
= 0
= - 0.5A
= - 3A
= - 0.5A
= - 0.5A
= - 1A
= 0
= 0
= 0
1.Base
1
Min.
- 60
60
20
- 55 ~ 150
Value
2.Collector
- 0.5
- 60
- 60
150
- 7
- 3
1.5
30
- 0.5
- 0.7
Typ.
150
0.4
1.7
0.5
100 ~ 200
9
TO-220
Y
Max.
- 100
- 100
200
3.Emitter
- 1
- 1
Units
Rev. A1, June 2001
W
W
V
V
V
A
A
C
C
Units
MHz
pF
V
V
V
A
A
s
s
s
Related parts for KSB834
KSB834 Summary of contents
... Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON T Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2001 Fairchild Semiconductor Corporation KSB834 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition 60V 7V ...
... I (A), COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage -10 I MAX. (Pulse MAX. (Continous -0.1 -1 -10 V (V), COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 EMITTER COMMON TC=25℃ 100 I =-60mA B I =-50mA B I =-40mA B I =-30mA =-20mA B I =-10mA ...
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...
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