KSB834 Fairchild Semiconductor, KSB834 Datasheet

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KSB834

Manufacturer Part Number
KSB834
Description
Ksb834 Pnp Silicon Epitaxial Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSB834Y
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Low Frequency Power Amplifier
• Complement to KSD880
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
P
BV
V
V
V
I
P
T
T
I
I
h
h
V
V
f
C
t
T
t
FE
B
Symbol
C
CBO
EBO
T
ON
F
FE1
FE2
C
J
STG
STG
CBO
CEO
EBO
C
CE
BE
ob
CEO
(on)
(sat)
Classification
Symbol
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
T
a
C
C
=25 C)
=25 C unless otherwise noted
Parameter
=25 C)
KSB834
V
V
I
V
V
I
V
V
V
f = 1MHz
V
I
R
C
C
B1
CB
EB
CE
CE
CE
CE
CB
CC
L
= - 50mA, I
= - 3A, I
= 30
= - I
60 ~ 120
= - 7V, I
= - 60V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 10V, I
= -30V, I
Test Condition
B2
O
= - 0.2A
B
C
= - 0.3A
C
C
C
C
C
E
B
E
= 0
= - 0.5A
= - 3A
= - 0.5A
= - 0.5A
= - 1A
= 0
= 0
= 0
1.Base
1
Min.
- 60
60
20
- 55 ~ 150
Value
2.Collector
- 0.5
- 60
- 60
150
- 7
- 3
1.5
30
- 0.5
- 0.7
Typ.
150
0.4
1.7
0.5
100 ~ 200
9
TO-220
Y
Max.
- 100
- 100
200
3.Emitter
- 1
- 1
Units
Rev. A1, June 2001
W
W
V
V
V
A
A
C
C
Units
MHz
pF
V
V
V
A
A
s
s
s

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KSB834 Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON T Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2001 Fairchild Semiconductor Corporation KSB834 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition 60V 7V ...

Page 2

... I (A), COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage -10 I MAX. (Pulse MAX. (Continous -0.1 -1 -10 V (V), COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 EMITTER COMMON TC=25℃ 100 I =-60mA B I =-50mA B I =-40mA B I =-30mA =-20mA B I =-10mA ...

Page 3

... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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