KSD288 Fairchild Semiconductor, KSD288 Datasheet

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KSD288

Manufacturer Part Number
KSD288
Description
Ksd288 Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
KSD288YTU
Manufacturer:
Fairchild Semiconductor
Quantity:
1 857
©2000 Fairchild Semiconductor International
Power Regulator
Low Frequency High Power Amplifier
• Collector-Base Voltage : V
• Collector Dissipation : P
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
FE
C
CBO
FE
J
STG
CBO
CEO
EBO
C
CE
Symbol
Symbol
CBO
CEO
EBO
(sat)
Classification
Classification
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
FE
C
=25W(T
CBO
=80V
Parameter
C
=25 C)
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
40 ~ 80
KSD288
R
I
I
I
V
V
I
C
C
E
C
CB
CE
=500 A, I
=500 A, I
=10mA,I
=1A, I
Test Condition
=50V,I
=5V,I
B
=0.1A
C
B
E
=0.5A
=0
C
=0
E
=0
=0
70 ~ 140
O
1.Base
1
Min.
80
55
40
5
- 55 ~ 150
2.Collector
Value
150
25
80
55
3
5
Typ.
TO-220
120 ~ 240
Max.
240
3.Emitter
Y
50
1
Rev. A, February 2000
Units
W
Units
V
V
V
A
C
C
V
V
V
V
A

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KSD288 Summary of contents

Page 1

... EBO I Collector Cut-off Current CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE h Classification FE Classification h FE ©2000 Fairchild Semiconductor International KSD288 = =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I =500 =10mA,I ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 o 1.Tc=25 C 2.*Single Pulse Thermal limitation 1 S/B limitation 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 10000 = 8mA I = 7mA B 1000 I = 6mA 5mA 4mA 3mA 100 B ...

Page 3

... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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