KSD288 Fairchild Semiconductor, KSD288 Datasheet
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Manufacturer Part Number
KSD288
Description
Ksd288 Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Available stocks
Manufacturer:
Fairchild Semiconductor
©2000 Fairchild Semiconductor International
Power Regulator
Low Frequency High Power Amplifier
• Collector-Base Voltage : V
• Collector Dissipation : P
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
FE
C
CBO
FE
J
STG
CBO
CEO
EBO
C
CE
Symbol
Symbol
CBO
CEO
EBO
(sat)
Classification
Classification
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
FE
C
=25W(T
CBO
=80V
Parameter
C
=25 C)
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
40 ~ 80
KSD288
R
I
I
I
V
V
I
C
C
E
C
CB
CE
=500 A, I
=500 A, I
=10mA,I
=1A, I
Test Condition
=50V,I
=5V,I
B
=0.1A
C
B
E
=0.5A
=0
C
=0
E
=0
=0
70 ~ 140
O
1.Base
1
Min.
80
55
40
5
- 55 ~ 150
2.Collector
Value
150
25
80
55
3
5
Typ.
TO-220
120 ~ 240
Max.
240
3.Emitter
Y
50
1
Rev. A, February 2000
Units
W
Units
V
V
V
A
C
C
V
V
V
V
A
Related parts for KSD288
KSD288 Summary of contents
... EBO I Collector Cut-off Current CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE h Classification FE Classification h FE ©2000 Fairchild Semiconductor International KSD288 = =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I =500 =10mA,I ...
... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 o 1.Tc=25 C 2.*Single Pulse Thermal limitation 1 S/B limitation 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 10000 = 8mA I = 7mA B 1000 I = 6mA 5mA 4mA 3mA 100 B ...
... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...
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