LN52 Panasonic - SSG, LN52 Datasheet

IR LED 950NM 100 DEG T0-18 SMALL

LN52

Manufacturer Part Number
LN52
Description
IR LED 950NM 100 DEG T0-18 SMALL
Manufacturer
Panasonic - SSG
Datasheet

Specifications of LN52

Current - Dc Forward (if)
100mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.25V
Viewing Angle
200°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Radiant Intensity (ie) Min @ If
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LN5261
Quantity:
831
Infrared Light Emitting Diodes
LN52
GaAs Infrared Light Emitting Diode
For optical control systems
*
f = 100 Hz, Duty cycle = 0.1 %
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
High-power output, high-efficiency : P
Wide directivity, matched for external optical systems : = 100 deg.
Infrared light emission close to monochromatic light :
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
Absolute Maximum Ratings (Ta = 25˚C)
Features
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Parameter
Symbol
Symbol
I
T
T
V
V
P
P
FP
I
C
I
t
t
opr
stg
R
F
D
O
r
f
P
R
F
t
*
O
= 6 mW (typ.)
–30 to +100
–25 to +85
I
I
I
I
V
V
I
The angle in which radiant intencity is 50%
Ratings
F
F
F
F
FP
R
R
= 100mA
= 100mA
= 100mA
= 100mA
160
100
= 100mA
= 3V
= 0V, f = 1MHz
2
3
Conditions
P
Unit
mW
mA
= 950 nm
˚C
˚C
A
V
min
3.5
1.25
950
100
typ
50
50
6
1
1
2
1
max
2.54 0.25
1.6
2-ø0.45 0.05
10
Unit : mm
1: Cathode
2: Anode
Unit
mW
deg.
nm
nm
pF
V
A
s
s
1

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LN52 Summary of contents

Page 1

... Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : P Wide directivity, matched for external optical systems : = 100 deg. Infrared light emission close to monochromatic light : Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors Absolute Maximum Ratings (Ta = 25˚ ...

Page 2

... LN52 I — 120 100 – 100 Ambient temperature Ta (˚ — Duty Cycle = 0. 25˚C – Forward voltage V ( — 1 100mA F 1.2 50mA 10mA 1mA 0.8 0.4 0 – 120 Ambient temperature Ta (˚ — Duty cycle 25˚ –1 10 –2 10 – Duty cycle (%) P — 120 Ta = 25˚ ...

Page 3

... Infrared Light Emitting Diodes Spectral characteristics 100 I = 100mA 25˚ 800 850 900 950 1000 1050 1100 Wavelength (nm) Directivity characteristics 0˚ 10˚ 20˚ 30˚ 40˚ 100 80 50˚ 60 60˚ 40 70˚ 20 80˚ 90˚ LN52 Frequency characteristics 25˚ –1 10 – Frequency f (kHz) 3 ...

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