MC74VHC1G09 ON Semiconductor, MC74VHC1G09 Datasheet

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MC74VHC1G09

Manufacturer Part Number
MC74VHC1G09
Description
Manufacturer
ON Semiconductor
Datasheet

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MC74VHC1G09
2−Input AND Gate with
Open Drain Output
gate with open drain output fabricated with silicon gate CMOS
technology. It achieves high speed operation similar to equivalent Bipolar
Schottky TTL while maintaining CMOS low power dissipation.
drain output which provides the capability to set output switching level.
This allows the MC74VHC1G09 to be used to interface 5 V circuits to
circuits of any voltage between V
and power supply.
voltages up to 7 V are applied, regardless of the supply voltage.
Features
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 16
The MC74VHC1G09 is an advanced high speed CMOS 2−input AND
The internal circuit is composed of three stages, including an open
The MC74VHC1G09 input structure provides protection when
High Speed: t
Low Internal Power Dissipation: I
Power Down Protection Provided on Inputs
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 62; Equivalent Gates = 16
Pb−Free Packages are Available
GND
IN B
IN A
PD
IN A
IN B
= 4.3 ns (Typ) at V
1
2
3
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
CC
&
and 7 V using an external resistor
CC
CC
OVT
= 1 mA (Max) at T
= 5 V
OUT Y
5
4
V
OUT Y
CC
A
= 25°C
1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
SC−88A / SOT−353 / SC−70
TSOP−5 / SOT−23 / SC−59
*Date Code orientation and/or position may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
A
H
H
L
L
1
2
4
3
5
ORDERING INFORMATION
CASE 419A
DF SUFFIX
DT SUFFIX
Inputs
CASE 483
VX
M
G
http://onsemi.com
FUNCTION TABLE
PIN ASSIGNMENT
= Device Code
= Date Code*
= Pb−Free Package
B
H
H
L
L
Publication Order Number:
OUT Y
GND
IN B
IN A
V
CC
MC74VHC1G09/D
5
1
DIAGRAMS
MARKING
Output
VX M G
Y
L
L
L
Z
VX M G
G
G

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MC74VHC1G09 Summary of contents

Page 1

... Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching level. This allows the MC74VHC1G09 to be used to interface 5 V circuits to circuits of any voltage between V and 7 V using an external resistor CC and power supply ...

Page 2

... MC74VHC1G09 Characteristics SC−88A, TSOP−5 SC−88A, TSOP−5 Oxygen Index Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Above V and Below GND at 125°C (Note 4) CC Characteristics = 3.3 V ± ...

Page 3

... Power Dissipation Capacitance (Note defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. PD Average operating current can be obtained by the equation power consumption MC74VHC1G09 T = 25° (V) Min Typ Test Conditions 2.0 1.5 3 ...

Page 4

... • (C+D) Figure 7. Complex Boolean Functions ORDERING INFORMATION Device MC74VHC1G09DFT1 MC74VHC1G09DFT1G MC74VHC1G09DFT2 MC74VHC1G09DFT2G MC74VHC1G09DTT1 MC74VHC1G09DTT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MC74VHC1G09 V − ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MC74VHC1G09 SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

Page 6

... IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. MILLIMETERS DIM MIN MAX A 3.00 BSC B 1.50 BSC C 0.90 1.10 D 0.25 0.50 G 0.95 BSC H 0.01 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1. 2.50 3.00 2.4 0.094 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MC74VHC1G09/D ...

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