ncp5111 ON Semiconductor, ncp5111 Datasheet

ncp5111

Manufacturer Part Number

ncp5111

Description

Single Input Half-bridge Power Mosfet Or Igbt Driver

Manufacturer

ON Semiconductor

Datasheet

1.NCP5111.pdf (14 pages)

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Download datasheet (138Kb)

NCP5111

High Voltage, High and Low

Side Driver

outputs for direct drive of 2 N-channel power MOSFETs or IGBTs

arranged in a half-bridge configuration.

high-side power switch.

Features

•

Typical Applications

•

July, 2007 - Rev. 1

The NCP5111 is a high voltage power gate driver providing two

It uses the bootstrap technique to ensure a proper drive of the

High Voltage Range: up to 600 V

dV/dt Immunity ±50 V/nsec

Gate Drive Supply Range from 10 V to 20 V

High and Low Drive Outputs

Output Source / Sink Current Capability 250 mA / 500 mA

3.3 V and 5 V Input Logic Compatible

Up to V

Matched Propagation Delays between Both Channels

One Input with Internal Fixed Dead Time (650 ns)

Under V

Pin-to-Pin Compatible with Industry Standards

These are Pb-Free Devices

Half-bridge Power Converters

Swing on Input Pins

LockOut (UVLO) for Both Channels

†For information on tape and reel specifications,

NCP5111PG

NCP5111DR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

NCP5111

L or WL

Y or YY

W or WW = Work Week

G or G

DRV_LO

CASE 751

CASE 626

ORDERING INFORMATION

D SUFFIX

P SUFFIX

SOIC-8

PDIP-8

GND

VCC

PINOUT INFORMATION

http://onsemi.com

= Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Pb-Free Package

(Pb-Free)

Package

SOIC-8

PDIP-8

Publication Order Number:

DIAGRAMS

2500 / Tape & Reel

VBOOT

DRV_HI

BRIDGE

MARKING

NCP5111

50 Units / Rail

Shipping

P5111

ALYW

YYWW

AWLG

NCP5111/D

†

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