NIF5003N ON Semiconductor, NIF5003N Datasheet

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NIF5003N

Manufacturer Part Number
NIF5003N
Description
Selfprotected Fet With Temperature And Current Limit
Manufacturer
ON Semiconductor
Datasheet

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NIF5003N
Self-Protected FET
with Temperature and
Current Limit
42 V, 14 A, Single N-Channel, SOT-223
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain-to-Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
3. Normal pre-fault operating range. See thermal limit range conditions.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 4
Drain-to-Source Voltage Internally Clamped
Gate-to-Source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance
Single Pulse Drain-to-Source Avalanche Energy
Operating and Storage Temperature Range
(Note 3)
HDPlus™ devices are an advanced series of power MOSFETs which
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb-Free Packages are Available
DSS
@ T
@ T
Junction-to-Case
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
(V
I
L
DD
= 7.0 Apk, L = 9.5 mH, R
Specified at Elevated Temperature
A
A
= 25 Vdc, V
= 25°C (Note 1)
= 25°C (Note 2)
Rating
Continuous
GS
(T
= 5.0 Vdc,
J
= 25°C unless otherwise noted)
Preferred Device
G
= 25 W)
Symbol
T
V
R
R
R
J
V
E
P
DSS
, T
I
qJC
qJA
qJA
GS
AS
D
D
stg
-55 to 150
Internally Limited
Value
"14
1.25
100
233
1.9
42
12
65
1
°C/W
Unit
Vdc
Vdc
mJ
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Gate
Input
(Clamped)
V
42 V
(Note: Microdot may be in either location)
DSS
ESD Protection
SOURCE
A
Y
W
5003N = Specific Device Code
G
ORDERING INFORMATION
1
DRAIN
Temperature
GATE
R
MARKING DIAGRAM
2
G
http://onsemi.com
http://onsemi.com
Limit
3
53 mW @ 10 V
= Assembly Location
= Year
= Work Week
= Pb-Free Package
R
Overvoltage
4
1
2
3
Protection
DS(on)
Publication Order Number:
CASE 318E
TYP
SOT-223
Current
STYLE 3
Limit
4
DRAIN
Drain
(Limited)
Current
NIF5003N/D
Sense
I
Source
D
14 A
MAX
M
PWR

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NIF5003N Summary of contents

Page 1

... PWR Protection R G ESD Protection Temperature Current Current Limit Limit Sense Source 4 SOT-223 CASE 318E 1 STYLE MARKING DIAGRAM 1 GATE 4 2 DRAIN DRAIN 3 SOURCE A = Assembly Location Y = Year W = Work Week 5003N = Specific Device Code G = Pb-Free Package ORDERING INFORMATION Publication Order Number: NIF5003N/D ...

Page 2

... Input Current during Thermal Fault ESD ELECTRICAL CHARACTERISTICS (T Electro-Static Discharge Capability Electro-Static Discharge Capability 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. NIF5003N (T = 25°C unless otherwise noted 4 ...

Page 3

... GS Figure 3. On-Resistance vs. Gate-to-Source Voltage 1 1.6 1.4 1.2 1.0 0.8 0.6 -50 -30 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NIF5003N TYPICAL PERFORMANCE CURVES 20 ≥ ...

Page 4

... ORDERING INFORMATION Device NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NIF5003N TYPICAL PERFORMANCE CURVES 25°C J 0.5 0.6 0.7 0 SOURCE-TO-DRAIN VOLTAGE (VOLTS) SD Figure 7 ...

Page 5

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NIF5003N/D ...

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