RB751 Rohm, RB751 Datasheet
RB751
Manufacturer Part Number
RB751
Description
Schottky barrier diode
Manufacturer
Rohm
Datasheet
1.RB751.pdf
(2 pages)
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Diodes
Schottky barrier diode
RB751S-40 / RB751V-40
!Applications
High speed switching
For Detection
! ! ! ! Features
1) Small surface mounting type.
2) Low reverse current and low
3) High reliability.
! ! ! ! Construction
Silicon epitaxial planar
! ! ! ! Absolute maximum ratings (Ta = 25°C)
! ! ! ! Electrical characteristics (Ta = 25°C)
Note) ESD sensitive product handling required.
* 60 Hz for 1
Forward voltage
Reverse current
Capacitance between terminals
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
(EMD2, UMD2)
forward voltage.
Parameter
Parameter
*
Symbol
Symbol
Tstg
V
C
V
I
V
I
FSM
I
Tj
R
RM
F
O
T
R
! ! ! ! External dimensions (Units : mm)
RB751S-40
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
RB751V-40
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
Min.
−
−
−
−40~+125
Typ.
2.0
Limits
−
−
200
125
40
30
30
1.25±0.1
Max.
0.37
5
0.5
−
0.3±0.05
CATHODE MARK
0.7
Unit
µA
pF
V
+0.2
−0.1
RB751S-40 / RB751V-40
0.8±0.05
Unit
mA
mA
0.1
˚C
˚C
V
V
5
+0.1
−0.05
0.3±0.05
I
V
V
F
R
R
= 1mA
CATHODE MARK
= 30V
= 1V, f = 1MHz
∗ There are two different markings.
0.6±0.1
0.12±0.05
Conditions
1.25±0.1
5
0.3±0.05
CATHODE MARK
0.7
+0.2
−0.1
0.1
+0.1
−0.05
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RB751 Summary of contents
Page 1
... Diodes Schottky barrier diode RB751S-40 / RB751V-40 !Applications High speed switching For Detection ! ! ! ! Features 1) Small surface mounting type. (EMD2, UMD2) 2) Low reverse current and low forward voltage. 3) High reliability Construction Silicon epitaxial planar ! ! ! ! Absolute maximum ratings (Ta = 25°C) Parameter Symbol Peak reverse voltage ...
Page 2
... Ta = 75˚ 25˚C 100µ -25˚C 10µ 1µ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE : V (V) F Fig. 1 Forward characteristics RB751S-40 / RB751V-40 100µ 125˚C 10µ 75˚C 1µ 25˚C 100n Ta = -25˚C 10n Typ. pulse measurement ...