RSS090N03 ROHM Co. Ltd., RSS090N03 Datasheet

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RSS090N03

Manufacturer Part Number
RSS090N03
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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1
Transistors
4V Drive Nch MOS FET
RSS090N03
Silicon N-channel MOS FET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Power switching, DC/DC converter.
∗1 Pw≤10µs, Duty cycle≤1%
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Source Current
(Body Diode)
Total Power Dissipation
Channel Temperature
Storage Temperature
Channel to Ambient
Type
RSS090N03
2 Mounted on a ceramic board.
Mounted on a ceramic board.
Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta = 25°C)
Thermal resistance
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
Rth (ch-a)
2500
Symbol
Symbol
TB
V
V
Tstg
Tch
I
P
I
GSS
I
DSS
DP
I
sp
D
s
D
1
1
2
−55 to +150
Limits
±9.0
Limits
±36
150
20
1.6
62.5
30
18
2
∗ A protection diode is included between the gate
External dimensions (Unit : mm)
Equivalent circuit
∗1 ESD Protection Diode.
∗2 Body Diode.
SOP8
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
(1)
(8)
2
°C / W
Unit
°C
°C
Unit
W
V
V
A
A
A
A
1pin mark
(2)
(7)
(3)
(6)
1.27
1
( 8 )
( 1 )
0.4
(4)
(5)
5.0
( 5 )
( 4 )
(8) (7) (6) (5)
(1) (2) (3) (4)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Each lead has same dimensions
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
1.75
0.2
RSS090N03
Rev.A
1/3

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RSS090N03 Summary of contents

Page 1

... 1 ∗ ∗ °C Tch 150 −55 to +150 °C Tstg Limits Unit ∗ ° 62.5 RSS090N03 5.0 1.75 0 0.2 1.27 Each lead has same dimensions (8) (7) (6) (5) (6) (5) ∗ (1) (2) (3) (4) 1 (1) Source (2) Source (3) Source (4) Gate (3) (4) (5) Drain (6) ...

Page 2

... ∗ − − ∗ − − Min. Typ. Max. Unit ∗ − − 1 RSS090N03 Test Conditions =20V =1mA =30V =10V, I =1mA =9A, V =10V =9A, V =4. ...

Page 3

... On-State Resistance vs. Gate-Source Voltage 10000 V GS Pulsed 1000 Ta=125°C 75°C 25°C −25°C 100 0.1 1 (A) DRAIN CURRENT : I D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (2) RSS090N03 8 Ta =15V =10Ω Pulsed 100 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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