SI2312 HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.], SI2312 Datasheet
SI2312
Manufacturer Part Number
SI2312
Description
20 V N-Channel Enhancement Mode MOSFET
Manufacturer
HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
Datasheet
1.SI2312.pdf
(3 pages)
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20V N-Channel Enhancement Mode MOSFET
JinYu
semiconductor
１
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
VDS= 20V
RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ
RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ
RDS(ON), Vgs@1.8V, Ids@3.9A < 85mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
www.htsemi.com
SOT-23-3L
TA = 25
TA = 75
o
o
C
C
REF.
A
B
C
D
E
F
T
Symbol
V
V
J
R
I
P
, T
I
DM
GS
DS
D
D
JA
stg
2.70
2.65
1.50
0.35
0.45
Min.
0
Millimeter
Max.
3.10
2.95
1.70
0.50
0.10
0.55
-55 to 150
REF.
Limit
G
H
M
0.75
0.48
K
L
J
140
+ 8
4.9
20
15
G
Ｄａｔｅ：２０１１／０５
Min.
1.00
0.10
0.40
0.85
0°
SI2312
1.90 REF.
Millimeter
D
o
C/W
Unit
o
W
Max.
10°
1.30
0.20
1.15
V
A
C
-
S
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SI2312 Summary of contents
Page 1
... Junction-to-Ambient Thermal Resistance (PCB mounted) １ JinYu semiconductor SOT-23-3L REF Symbol stg R JA www.htsemi.com SI2312 D G Millimeter Millimeter REF. Min. Max. Min. 2.70 3.10 G 1.90 REF. 2.65 2.95 H 1.00 1.50 1.70 K 0.10 0.35 0.50 J 0.40 0 0.10 L 0.85 0.45 0.55 M 0° Limit ...
Page 2
... RL=10Ω 1A 4.5V D GEN t d(off iss oss f = 1.0 MHz C rss 1.8A www.htsemi.com SI2312 Min. Typ. Miax. Unit 20 V 21.0 31.0 24.0 37.0 m 50.0 85.0 0 ± 100 11 1.4 2 500 300 ...
Page 3
... N-Channel Enhancement Mode MOSFET ３ JinYu semiconductor www.htsemi.com SI2312 Ｄａｔｅ：２０１１／０５ ...