TC4421 TelCom Semiconductor, TC4421 Datasheet
TC4421
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TC4421 Summary of contents
Page 1
... In addi- tion, all terminals are fully protected against electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms ...
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... See Figure 1 V See Figure 18V 18V 18V DD 10V V 18V (TC4421/22 CAT only) Duty Cycle 2% Withstand Reverse Current t Figure 10,000 pF L Figure 10,000 pF L Figure 1 Figure ...
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... Figure 10,000 pF L Figure 1 Figure 0.1 F +5V INPUT 0 +18V OUTPUT OUTPUT C = 10,000 Figure 1. Switching Time Test Circuit TC4421 TC4422 Min Typ Max Unit 2.4 — — — — 0.8 – 10 — – 0.025 — — DD — — 0.025 — ...
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... TC4421 TC4422 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 220 200 180 22,000 pF 160 140 120 10,000 pF 100 80 4700 1000 Rise TIme vs. Capacitive Load 300 250 200 150 100 50 0 100 1000 10,000 C LOAD (pF) Rise and Fall Times vs. Temperature ...
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... TC4421 TC4422 Supply Current vs. Frequency (V = 18V) DD 47,000 pF 22,000 pF 10,000 pF 0.1 µF 4700 pF 470 pF 100 1000 FREQUENCY (kHz) Supply Current vs. Frequency (V = 12) DD 22,000 pF 10,000 pF 47,000 pF 4700 pF 0.1 µ ...
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... TC4421 TC4422 TYPICAL CHARACTERISTICS (Cont.) Propagation Delay vs. Input Amplitude 120 110 100 INPUT (V) Crossover Energy vs. Supply Voltage –6 10 –7 10 – NOTE: The values on this graph represent the loss seen by the driver during a complete cycle ...